Study on low energy-loss diamond power diodes

研究了金刚石肖特基二极管（SBD）漏电流产生的原因。结果表明，漏电流增加的主要因素有金刚石的固态特性、金刚石SBD器件的结构因素和金刚石晶体缺陷等外在因素。其中，漏电流水平和肖特基势垒高度之间的强相关性被观察到，这是由于局部低肖特基势垒高度的形成。这一特点是金刚石的本质问题，因为金刚石SBD利用表面终止特性，金刚石具有低介电常数。针对晶体缺陷的影响，提出了金刚石SBD杀手缺陷的无损检测方法。金刚石SBD的热稳定性被发现发生的界面氧的解吸。

Origin of inducing the leakage current of diamond Schottky diodes (SBDs) were investigated. It was found that there are several factors of leakage current increase, which are categorized into the essential factor coming from the solid-state properties of diamond, device structural factors of diamond SBDs, and the extrinsic factors of crystalline defects of diamond. Among those, strong correlation between the leakage current level and the Schottky barrier height was observed, that is due to the formation of the localized low Schottky barrier height. This feature is essential problem of diamond because the diamond SBD utilizes surface termination properties and diamond has low dielectric constant. As for the effect of crystalline defects, we proposed the non-destructive detection method of the killer defects of diamond SBDs. Thermal stability of diamond SBDs was found to occur by the desorption of the interface oxygen.