Development of selective heating method using microwave plasmaexcited species

我们已经进行了技术开发，利用微波激发形成的氢原子辐照来选择性地快速加热Ge和过渡金属。我们通过60秒左右的氢原子辐照证实了沉积在玻璃衬底上的非晶态Ge薄膜的多晶化。在非晶硅薄膜未被氢原子加热的情况下，我们在非晶硅薄膜的部分上沉积了钨原子，并通过侧向固相生长进行了薄膜的多晶化。我们在多晶膜上制备了场效应晶体管，实现了约40cm2/vs的有效迁移率。

We have performed technology development to enable the selectiveand rapid heating of Ge and the transition metals using irradiation of hydrogen atoms formedby microwave excitation. We confirmed polycrystallization of amorphous Ge films depositedon glass substrates by the hydrogen atoms irradiation of around 60 seconds. In the caseof amorphous Si films which were confirmed not to be heated with hydrogen atoms, wedeposited tungsten atoms on parts of the amorphous Si films and performedpolycrystallization of the films by the lateral solid-phase growth. We have fabricatedfield effect transistors on the polycrystalline films and realized effectiveness mobilityof ～40 cm2/Vs.