Transparent Conductive Multicomponent Oxide Thin Films with High Stability for High Temperature Use

研究了由二元化合物(如ZnO、In_2O_3)和SnO_2三元化合物(如：Zn_2In_2O_5、In_4Sn_2O_5、In_4SnO_3、MgIn_2O_4、GaInO_3、ZnSnO_3、MgIn_2O_4)组成的透明导电氧化物(TCO)薄膜以及由二元或三元化合物组合而成的多元氧化物在不同气氛下的高温稳定性。用磁控溅射法在室温或350ﾟC的石英衬底上制备了TCO薄膜，并在空气、氩气或真空中进行了测试，测试温度可达1000ﾟC。考虑到其电学性能的稳定性，在350ﾟC下制备的SnO_2、SnO_2：Sb和In_4Sn30_(？)12&gt；薄膜在空气中温度高达900ﾟC.在温度高达900ﾟC的Ar气氛中是稳定的。多元氧化物薄膜的稳定性是通过改变薄膜的组成来控制的。在微观上，随着TCO薄膜中锡含量的增加，薄膜的稳定性提高，但随着锌、镁和/或镓含量的增加，稳定性降低。发现含锌的TCO薄膜的电阻率增加是由于氧吸附引起的晶界散射。结果表明，TCO膜在高温下的化学稳定性主要取决于TCO膜中所含的金属元素，富锡的TCO膜表现出较高的稳定性。

A number of transparent conductive oxide (TCO) films consisting of binary compounds such as ZnO, In_20_3 and SnO_2 ternary compounds such as Zn_2In_2O_5, In_4Sn_30_<12>, GaIn0_3, ZnSn0_3, and MgIn_2O_4 and multicomponent oxides composed of combinations of binary compounds or ternary compounds were tested for stability in various atmospheres at high temperatures. The TCO films were prepared by magnetron sputtering on quartz substrates at room temperature or 350ﾟC and tested in air, argon gas or a vacuum at temperatures up to 1000ﾟC.Concerning the stability of their electrical properties, SnO_2, SnO_2 : Sb and In_4Sn_30_<12> films prepared at 350ﾟC were stable in air at temperatures up to 900ﾟC.TCO films such as In_20_3, ITO, SnO_2, SnO_2 : Sb and In_4Sn_30_<12> were stable in an Ar gas atmosphere at temperatures up to 900ﾟC.The stability of multicomponent oxide films was controlled by changing the composition of films. In partictular, the stability was improved as the Sn content in TCO films was increased, but it was decreased as the Zn, Mg and/or Ga contents were increased. The resistivity increase found in TCO films that contained Zn was attributed to grain boundary scattering resulting from oxygen adsorption. As a result, the chemical stability at high temperatures was mainly determined by the metal elements contained in the TCO film ; high stability was exhibited in TCO films rich in Sn.