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Study single event effects in logic circuits with 28nm CMOS bulk and SOI technologies

Study single event effects in logic circuits with 28nm CMOS bulk and SOI technologies
使用 28nm CMOS 体和 SOI 技术研究逻辑电路中的单粒子效应
批准号:
460881-2013
负责人:
Chen, Li
金额:
$6.11万
依托单位:
依托单位国家:
加拿大
项目类别:
Collaborative Research and Development Grants
财政年份:
2015
资助国家:
加拿大
项目状态:
已结题
起止时间:
2015-01-01 至 2016-12-31

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中文摘要
翻译
在过去的四十年中,硅技术通过增加晶体管密度和工作频率,同时降低每个晶体管的成本和能耗,显着改善了集成电路(ic)。然而,硅技术的缩放使得集成电路更容易受到高能粒子引起的单事件效应(SEEs)的影响。在设计良好的集成电路中,无论是在地面环境还是在高海拔或空间环境中,由see引起的软误差都是最棘手的问题。存储单元是数字系统中软错误的主要来源之一,不同厂商设计的软错误率可能相差3个数量级。绝缘体上硅(SOI)工艺已成为降低电子系统软错误率的一种有前途的技术。拟议项目的目标是开发用最先进的CMOS技术制造的容错逻辑电路,以减少思科交换机和其他电子产品的软错误率。我们将在先进的块体和SOI CMOS技术(28nm工艺)中研究SEE,并致力于开发容错数字存储和传感电路。包括布局和设计技术在内的各种技术将用于开发容错存储单元。设备和原理图模拟工具将用于调查,以便有效地开发SEE缓解方法。制作的测试芯片将在脉冲激光、重离子、质子和中子束下进行测试,以验证设计的有效性。来自不同测试设备的结果也将相互关联。一名博士生、两名博士生和一名硕士生将接受培训,以推进这项技术,并与工业伙伴密切合作。研究成果将产生可申请专利的技术,并在相关期刊和会议上发表。加拿大的行业合作伙伴(Cisco Canada)可以采用该项目开发的技术来提高其产品(如交换机和线路卡)的可靠性。该项目还将提高萨斯喀彻温大学微电子可靠性研究小组的能力和专业知识。
英文摘要
Over the last four decades, silicon technology scaling has remarkably improved the integrated circuits (ICs) by increasing the transistor density and operating frequency while reducing the cost and energy consumption per transistor. However, the scaling of silicon technologies makes ICs more vulnerable to single event effects (SEEs) induced by energetic particles. In a well-designed IC, soft errors induced by SEEs appear to be the most troublesome both in terrestrial and high altitude or space environment. Storage cells are one of the major sources of soft errors in digital systems, and the soft error rates can be in 3 order differences for the designs from different vendors. Silicon-on-insulator (SOI) process has emerging to be a promising technology for reducing soft error rates in electronic systems. The objectives of the proposed project are to develop fault-tolerant logic circuits that are fabricated with the most advanced CMOS technologies in order to reduce the soft error rate in Cisco's switches and other electronic products. We will study SEE in both advanced bulk and SOI CMOS technologies (28nm process) and aim to develop fault-tolerant digital storage and sensing circuits. Various techniques including both layout and design techniques will be used to develop the fault-tolerant storage cells. Device and schematic simulation tools will be used for the investigation, so that SEE mitigation methods can be effectively developed. The fabricated test chips will be tested with pulsed laser, heavy ion, proton and neutron beams to verify the effectiveness of the designs. The results from different testing facilities will also be correlated. One PDF, two Ph.D. students and one mater's student will be trained to advance the technology and to work closely with the industrial partners. The research results will result in patentable technologies and publications in related journals and conferences. The Canadian industry partner (Cisco Canada) can adopt the technologies developed from this project to improve the reliability of their products such as switches and linecards. The project will also enhance the capability and expertise of the research group in the area of microelectronics reliability at the University of Saskatchewan.
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