Characterize Single Event Transient Effects and Study Redundant Logic in Digital Circuits using 28 nm FDSOI Technology

使用 28 nm FDSOI 技术表征单事件瞬态效应并研究数字电路中的冗余逻辑

• 批准号: 484339-2015
• 负责人: Chen, Li
• 金额: $ 6.06万
• 依托单位: University of Saskatchewan
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2015
• 资助国家: 加拿大
• 起止时间: 2015-01-01 至 2016-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=584253
• 关键词: Characterize; Single; Event; Transient; Effects

Over the last four decades, silicon technology scaling has remarkably improved the integrated circuits (ICs) by increasing the transistor density and operating frequency while reducing the cost and energy consumption per transistor. However, the scaling of silicon technologies makes ICs more vulnerable to single event effects (SEEs) induced by energetic particles. In a well-designed IC, soft errors induced by SEEs appear to be the most troublesome both in terrestrial and high altitude or space environment. Silicon-on-insulator (SOI) process has emerging to be a promising technology for high speed and low power applications. The main objectives of the project are to characterize the single event transient pulses and develop/evaluate the redundant logic techniques by using the most advanced FDSOI process in order to reduce the soft error rate in Cisco's switches and other electronic products. The purpose is to precisely measure the pulse width induced by the ions in this advanced FDSOI technology, and then this information can be used to model the SET and develop corresponding mitigation techniques. We will also develop and evaluate the approximate logic techniques and apply them to realize ARM processors. Device and schematic simulation tools will be used for the investigation, so that SEE mitigation methods can be effectively developed. The fabricated test chips will be tested with pulsed laser, heavy ion, proton and neutron beams to verify the effectiveness of the designs. The results from different testing facilities will also be correlated. One PDF, two Ph.D. students and one mater's student will be trained to advance the technology and to work closely with the industrial partners. The research results will result in patentable technologies and publications in related journals and conferences. The Canadian industry partner (Cisco Canada) can adopt the technologies developed from this project to improve the reliability of their products such as switches and linecards. The project will also enhance the capability and expertise of the research group in the area of microelectronics reliability at the University of Saskatchewan.

在过去的四十年中，硅技术缩放通过增加晶体管密度和工作频率，同时降低每个晶体管的成本和能耗，显著改善了集成电路（IC）。然而，硅技术的规模化使得IC更容易受到高能粒子引起的单粒子效应（SEE）的影响。在一个设计良好的集成电路，软错误引起的SEE似乎是最麻烦的地面和高海拔或空间环境。 绝缘体上硅（SOI）工艺在高速、低功耗应用中具有广阔的应用前景。该项目的主要目标是通过使用最先进的FDSOI工艺来表征单粒子瞬态脉冲并开发/评估冗余逻辑技术，以降低Cisco交换机和其他电子产品中的软错误率。其目的是精确测量在这种先进的FDSOI技术中由离子引起的脉冲宽度，然后这些信息可以用于模拟SET和开发相应的缓解技术。我们还将开发和评估近似逻辑技术，并将其应用于实现ARM处理器。设备和原理图模拟工具将用于调查，以便有效地开发SEE缓解方法。制作的测试芯片将用脉冲激光、重离子、质子和中子束进行测试，以验证设计的有效性。来自不同测试设施的结果也将相互关联。一个PDF，两个博士学生和一个导师的学生将接受培训，以促进技术的发展，并与工业伙伴密切合作。研究成果将产生可申请专利的技术，并在相关期刊和会议上发表。加拿大行业合作伙伴（思科加拿大）可以采用该项目开发的技术，以提高其产品（如交换机和线路卡）的可靠性。该项目还将提高萨斯喀彻温大学微电子可靠性研究小组的能力和专门知识。