GaN technology used for the fabrication of stable and high efficiency rectifier

在微电子学中，硅是使用最广泛的材料。业界作出了很大的努力， 领导者克服硅的物理限制，以满足微电子的期望 市场在小型化和性能方面。目前，硅技术似乎已经达到了 极限这为III-V族半导体提供了一个很好的替代品， 材料的选择非常广泛。这些半导体的电学和光学性能超过 那些硅。基于III-V族材料的器件具有很大的应用潜力，如 高附加值应用（CPV、嵌入式系统等）和一般公共应用（家用AC-DC 转换器）。此外，这些组件具有非常高的能量效率，这是 未来十年的技术发展。 在这次合作“Engage-NSERC”中，该项目与DC/DC等电源转换系统一起拨号 更具体地，与硅转换器之间的互连损耗相关联的问题 驱动器和GaN功率器件。该项目的目标是开发“全GaN” - 包括驱动器和功率器件的工艺过程，以消除寄生损耗， 限制设备性能的影响。 该项目将汇集学术界和工业界的参与者，他们都具有III-V的专业知识 半导体应用于电力电子领域。该合作将与 GaNSystems为了开发一种新的“全GaN”功率电路制造技术， 工业化。

In microelectronics, silicon is the most widely used material. Strong efforts have been made by the industry leaders to overcome the silicon physical limitations in order to satisfy the expectations of the microelectronics market in terms of miniaturization and performances. Currently, silicon technology seems to have reached its ultimate limit. This presents a great opportunity for III-V semiconductors that offer a good alternative and a very wide selection of materials. These semiconductors have electrical and optical properties which exceed those of silicon. The devices based on III-V materials have great potential for many kind of application, like high added value applications (CPV, embedded system ...) and general public applications (domestic AC-DC converters). In addition, these components have a very high energy efficiency which is an essential criterion for the technological development of the next decade. In this collaboration "Engage-NSERC", the project dials with the power conversion systems such as DC/DC converters and more particularly the problems associated with interconnections losses between the silicon driver and the GaN power device. The objective of this project is the development of a "full GaN" technological process including the driver and the power device in order to eliminate the parasitic losses and effects which limit the device performance. This project will bring together academic and industrial players both having an expertise in III-V semiconductor applied to the field of power electronics. The collaboration will establish a partnership with GaNSystems in order to develop a new "full GaN" power circuit manufacturing technology lends to be industrialized.