Focused Ion Beam de-Layering and Device Modification of Electronic and Photonic Circuits**
Focused Ion Beam de-Layering and Device Modification of Electronic and Photonic Circuits**
批准号:
536987-2018
负责人:
Knights, Andrew
金额:
$1.82万
依托单位:
依托单位国家:
加拿大
项目类别:
Engage Grants Program
财政年份:
2018
资助国家:
加拿大
项目状态:
已结题
起止时间:
2018-01-01 至 2019-12-31
中文摘要
在这个项目中,我们试图采用新的图案化仪器的形式等离子体(氙)离子聚焦 ** 离子束(FIB)铣削控制的大小,形状和程度的半导体和光子 ** 设备的包装。新型等离子体离子束是一种新的仪器,其优势在于它们可以以纳米分辨率局部溅射和雕刻材料。该Ga源具有高的研磨速率,并且不会留下注入残留物(与当前的Ga FIB研磨相比)。这种特性避免了Ga研磨的负面后果,例如意外的化学掺杂,从而影响所研究的器件的光学和电子特性。此外,该等离子体源允许高材料去除速率,从而实现快速处理。** 我们将与我们的合作伙伴(TechInsights Inc.)开发必要的最佳仪器和材料参数,i)电子封装的精确和良好放置的分层,以便暴露金属化的有源层以进行进一步分析,以及ii)硅光子芯片的自动化处理,以通过波导面的3-D工程来改善光纤-芯片和芯片-芯片耦合。这两个应用程序都依赖于对离子-样品相互作用的基本理解以及基于Python的脚本和图像分析的使用。我们将测试这种方法在高附加值和特定场地半导体加工中的可行性和可扩展性。** 成功完成拨款将为TechInsights(以及加拿大)带来重大利益,包括竞争优势、人员培训以及新产品和服务。目前的工作被视为未来重要合作的跳板。**
英文摘要
In this project, we seek to employ new patterning instrumentation in the form of plasma (xenon) ion Focused**Ion Beam (FIB) milling to control the size, shape and degree of packaging of semiconductor and photonic**devices. Novel plasma ion beams are new instruments that have an advantage in that they sputter and sculpt**materials locally with nano-meter resolution. The Xe source has a high milling rate, and doesn't leave an implanted residue (as compared to current Ga FIB milling). This property avoids negative consequences of Ga milling such as accidental chemical doping, consequentially impacting the optical and electronic properties of the device under study. Furthermore, the Xe plasma source allows for a high material removal rate, thus enabling rapid processing. ** We will work with our partner (TechInsights Inc.) to develop the optimal instrumentation and material parameters necessary for i) accurate and well-placed de-layering of electronic packaging in order to expose the active layers of metalization for further analysis, and ii) the automated processing of silicon photonics chips to improve fibre-chip, and chip-chip coupling through 3-D engineering of waveguide facets. Both of these applications rely on a fundamental understanding of ion-sample interactions and the use of python-based scripting and image analysis. We will test the feasibility and scaleability of this approach for high value-added and site-specific semiconductor processing.** Successful conclusion of the grant will lead to significant benefits to TechInsights (and thus to Canada) in the form of competitive advantage, personnel training, and new product and service offerings. The current work is viewed as a springboard to a significant future collaboration.**
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