Ultra high quality transition metal dichalcogenide synthesis by molecular beam epitaxy for integrated light emitting diodes and ion sensitive transistors

二维材料是一类以原子单层形式存在的新型材料，具有广泛的物理性质。虽然石墨烯是最广为人知的二维材料，但它是一种不适合电子设备的导体，这促使人们对半导体二维材料的发展进行了长达十年的研究。过渡金属二卤化物(TMDCs)和氮化硼(BN)是二维半导体，可以制成发光二极管和晶体管等有用的器件。然而，在光子学和固态传感应用领域采用TMDCs和BN的一个重大挑战是开发高质量材料的制造工艺。我们建议在这里直接解决纳米技术和量子材料交汇处的这一先进制造挑战。我们将使用分子束外延(MBE)开发一种可扩展的超高质量2D材料制造方法，最终目标是展示：A)1.3-1.65微米发光二极管适用于电信应用；B)离子敏感场效应晶体管适用于基因组测序。最高质量的传统半导体结构是通过分子束外延生长的，我们的目标是利用分子束外延生长的卓越质量来解决工业在采用2-D材料时面临的制造挑战。我们的团队由世界知名的分子束外延生长(Z.Mi)、原子分辨材料分析(G.Botton)和二维材料(T.Szkopek)专家组成。我们与独联体科学公司建立了合作伙伴关系，该公司是电子和光电子领域硫系化合物材料领域的领先专家。我们还与纳米技术公司合作，该公司是纳米级器件建模的领先专家，对器件结构的工程优化至关重要。这项工作将使可扩展的2-D半导体制造工艺的开发成为可能，将培训下一代半导体方面的高素质人员，并将为我们的加拿大公司合作伙伴提供在2-D材料开发方面的国际领先地位可以实现的经济机会。*

2-D materials are a new class of materials that exist as atomic monolayers, and which possess a wide range of useful physical properties. While graphene is the most well known of the 2-D materials, it is a conductor that is unsuitable for electronics, spurring a decade of research into the development of semiconducting 2-D materials. The transition metal dichalcogenides (TMDCs) and boron nitride (BN) are 2-D semiconductors, which can be fashioned into useful devices such as light emitting diodes and transistors. A grand challenge for the adoption of TMDCs and BN in the application areas of photonics and solid state sensing however, is the development of a manufacturing process for high quality material. We propose here to directly address this advanced manufacturing challenge at the intersection of nanotechnology and quantum materials. We will use molecular beam epitaxy (MBE) to develop a scalable manufacturing approach for ultra high quality 2-D materials, with the end goal of demonstrating: A) 1.3-1.65µm light emitting diodes suitable for telecommunications applications and B) ion sensing field effect transistors suitable for genome sequencing. The highest quality conventional semiconductor structures are grown by MBE, and we aim to harness the superior quality of MBE growth to address the manufacturing challenge faced by industry in adopting 2-D materials. Our team is composed of world reknown experts in MBE growth (Z. Mi), atomic resolution material analysis (G. Botton), and 2-D materials (T. Szkopek). We are partnered with CIS Scientific Inc., leading experts in chalcogenide based materials for electronics and optoelectronics. We are also partnered with NanoAcademic Technologies, leading experts in nanoscale device modelling, essential to the engineering optimization of device structures. This work will enable the development of a scalable manufacturing process for 2-D semiconductors, will train highly qualified personnel in next generation semiconductors, and will provide our Canadian corporate partners with economic opportunities that can be realized from an international leadership position in 2-D materials development.****