Materials and Device Development for Silicon-based Optoelectronics
Materials and Device Development for Silicon-based Optoelectronics
批准号:
RGPIN-2017-04696
负责人:
Knights, Andrew
金额:
$3.42万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2020
资助国家:
加拿大
项目状态:
已结题
起止时间:
2020-01-01 至 2021-12-31
中文摘要
对通信网络带宽增加的似乎无法满足的需求,对硬件和软件工程师提出了有史以来最大的技术挑战。带宽需求的指标包括连接到互联网的设备数量和数据中心内的总流量;两者都呈指数增长。前者与所谓的物联网(IoT)直接相关,而后者则呈现出路线图的严峻现实,具有不可避免的轨迹,但实现的解决方案尚不清楚,或尚未实施。
该提案将满足对可扩展且具有成本效益的网络硬件的需求,利用称为硅光子学(SiP)的强大技术。在其最基本的层面上,SiP集成了电子与光学量子,具有显着的性能增益; SiP将彻底改变所有距离的数据传输。在提案中,我描述了一个创新的SiP系统的材料和设备的研究计划。该计划被构建为毕业工程师的强大培训工具。
我将探讨通过离子注入在硅波导工程缺陷的特点。这种缺陷(例如)在单片检测器中得到利用。这在2000 nm左右的波长处特别重要,其中新的通信窗口正在开发中。随后,我将制作一个完整的2000 nm SiP平台,并演示一个工作在> 25 Gb/s的光链路。我将开发离子束技术,显示选择性合成硅锗卷的应用程序需要应变工程的承诺。使用硅微电子调制器,我将扩大我以前的工作高度集成的WDM收发器。我将探索微电子稳定和制造后微调的方法,目的是大幅降低相关的功率预算。我将扩展我以前的工作,色散补偿使用硅微调制器的复合元件,如双环,或环辅助马赫-曾德尔将提供链路色散调谐的使用。 我将追求子载波调制的概念,目的是实现数据传输速率接近1 Tb/s的一个单一的单位时,结合WDM。
对加拿大人的长期利益将包括:a)对加拿大SiP行业的战略支持; B)对重要工业部门的HQP进行直接培训; c)实现新的SiP产品和服务。从广义上讲,这项工作将成为正在展开的全球信息革命的一部分,加拿大人下载信息,参加社交网络,获取有关其环境的信息,需要快速医疗诊断,并使用消费电子产品。
英文摘要
The seemingly insatiable demand for increased bandwidth on communication networks is presenting the greatest technological challenges ever made on hardware and software engineers alike. Indicators of bandwidth demand include the number of devices connected to the internet and the total traffic within data-centres; both exhibit exponential growth. The former relates directly to the so-called Internet-of-Things (IoT) while the latter presents the stark reality of a roadmap with an inevitable trajectory, but for which solutions for realization are not known, or have yet to be implemented.
This proposal will address the need for network hardware that is scalable and cost-effective, utilizing the powerful technology known as Silicon Photonics (SiP). At its most fundamental level SiP integrates electronic with optical quanta with remarkable performance gains; SiP will revolutionize data transfer at all distances. In the proposal I describe an innovative program of research on materials and devices for SiP systems. The program is constructed as a strong training vehicle for graduate engineers.
I will explore characteristics of defects engineered via ion implantation in silicon waveguides. Such defects find utilization (for example) in monolithic detectors. This is of particular importance at wavelengths around 2000nm where a new communication window is under development. I will subsequently fabricate a complete SiP platform for 2000nm and demonstrate an optical link operating at >25Gb/s. I will develop ion beam techniques which show promise for selective synthesis of germanium volumes in silicon for applications requiring strain engineering. Using silicon microring modulators I will expand my previous work on highly integrated WDM transceivers. I will explore methods for microring stabilization and post-fabrication trimming with the aim to dramatically reduce the associated power budget. I will expand on my previous work on dispersion compensation using silicon microring modulators to the use of compounded elements such as dual rings, or ring assisted Mach-Zehnders which will provide link-dispersion tuning. I will pursue the concept of sub-carrier modulation with the aim of realising data transfer rates approaching 1Tb/s for a single unit when combined with WDM.
Tangible benefits to Canadians will include: a) strategic support for the Canadian SiP industry; b) direct training of HQP for a vital industrial sector c) realization of new SiP-enabled products and services. In a broad sense, this work will form part of the unfolding global information revolution which is experienced by Canadians who download information, take part in social networking, access information on their environment, require rapid medical diagnosis, and utilize consumer electronics.
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会议论文
Materials and Device Development for Silicon-based Optoelectronics
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批准号:RGPIN-2017-04696
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项目类别:Discovery Grants Program - Individual
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资助金额:$6.85万
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财政年份:2021
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负责人:Knights, Andrew
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依托单位:
Strategies for the scalable fabrication, characterization and processing of graphene and other technologically important 2-D films
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批准号:536629-2018
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项目类别:Collaborative Research and Development Grants
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资助金额:$4.13万
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财政年份:2020
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负责人:Knights, Andrew
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依托单位:
Materials and Device Development for Silicon-based Optoelectronics
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批准号:RGPIN-2017-04696
-
项目类别:Discovery Grants Program - Individual
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资助金额:$3.42万
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财政年份:2019
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负责人:Knights, Andrew
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依托单位:
Provision of Open-Access Positron Beam Spectroscopy to Canadian Universities (OPEN-POS)
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批准号:RTI-2020-00461
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项目类别:Research Tools and Instruments
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资助金额:$8.38万
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财政年份:2019
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负责人:Knights, Andrew
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依托单位:
Strategies for the scalable fabrication, characterization and processing of graphene and other technologically important 2-D films
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批准号:536629-2018
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项目类别:Collaborative Research and Development Grants
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资助金额:$3.95万
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财政年份:2019
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负责人:Knights, Andrew
-
依托单位:
Materials and Device Development for Silicon-based Optoelectronics
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批准号:RGPIN-2017-04696
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.42万
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财政年份:2018
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负责人:Knights, Andrew
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依托单位:
Amplified silicon photonics
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批准号:494306-2016
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项目类别:Strategic Projects - Group
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资助金额:$10.49万
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财政年份:2018
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负责人:Knights, Andrew
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依托单位:
Focused Ion Beam de-Layering and Device Modification of Electronic and Photonic Circuits**
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批准号:536987-2018
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2018
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负责人:Knights, Andrew
-
依托单位:
Materials and Device Development for Silicon-based Optoelectronics
-
批准号:RGPIN-2017-04696
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.42万
-
财政年份:2017
-
负责人:Knights, Andrew
-
依托单位:
Amplified silicon photonics
-
批准号:494306-2016
-
项目类别:Strategic Projects - Group
-
资助金额:$13.33万
-
财政年份:2017
-
负责人:Knights, Andrew
-
依托单位:
The Development and Application of Doping Technologies in the Applied Nanotools Electron-Beam Lithography based Silicon Photonic Platform (NanoSOI)
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批准号:501623-2016
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2016
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负责人:Knights, Andrew
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依托单位:
Tunable Laser Source and Optical Spectrum Analyzer for the Mid-IR
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批准号:RTI-2017-00474
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项目类别:Research Tools and Instruments
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资助金额:$6.5万
-
财政年份:2016
-
负责人:Knights, Andrew
-
依托单位:
Band-gap modification applied to the development of silicon photonic devices
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批准号:288302-2012
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.4万
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财政年份:2016
-
负责人:Knights, Andrew
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依托单位:
Band-gap modification applied to the development of silicon photonic devices
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批准号:288302-2012
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.4万
-
财政年份:2015
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负责人:Knights, Andrew
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依托单位:
Band-gap modification applied to the development of silicon photonic devices
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批准号:288302-2012
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.4万
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财政年份:2014
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负责人:Knights, Andrew
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依托单位:
Deep-level mediated optical functionality in silicon (SOI) waveguides enabling scalable optical interconnection
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批准号:446981-2013
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项目类别:Idea to Innovation
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资助金额:$9.11万
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财政年份:2013
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负责人:Knights, Andrew
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依托单位:
Band-gap modification applied to the development of silicon photonic devices
-
批准号:288302-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2013
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负责人:Knights, Andrew
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依托单位:
Design, fabrication and test of a silicon-based tuneable filter for integration with a comb laser
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批准号:444944-2012
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2012
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负责人:Knights, Andrew
-
依托单位:
Band-gap modification applied to the development of silicon photonic devices
-
批准号:288302-2012
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.4万
-
财政年份:2012
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负责人:Knights, Andrew
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依托单位:
Travel to Enablence and One Chip Semiconductor in Ottawa to develop new collaborations
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批准号:429641-2011
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项目类别:Interaction Grants Program
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资助金额:$0.34万
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财政年份:2011
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负责人:Knights, Andrew
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依托单位:
海外基金