Metalorganic Chemical Vapor Deposition of Aluminum Nitride: Surface Chemistry and Processes

氮化铝的金属有机化学气相沉积：表面化学和工艺

• 批准号: 9303974
• 负责人: James Rogers
• 金额: $ 31.98万
• 依托单位: University of Washington
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-06-01 至 1996-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9303974&HistoricalAwards=false
• 关键词: Metalorganic; Chemical; Vapor; Deposition; Aluminum

This work focusses on the growth and processing of aluminum nitride (AlN), a technologically important III-V compound, by metalorganic chemical vapor deposition (MOCVD). The adsorption, decomposition, and thermal stability of a series of alkylaluminum and alkylsilylaluminum compounds are investigated on selected substrates. The derivatized substrates are subsequently reacted with a nitridant gas (ammonia or hydrazine) to promote precursor formation; the precurser is then reacted further to form two-dimensional oligomers of AlN. Energetics and intermediates at each stage of the deposition process are probed with both high-pressure and ultrahigh-vacuum surface analysis techniques. Objectives include the requirements for ordered growth at low substrates temperature, use of modified substrates as templates for site-selective adsorption, more facile nitridant gases, and the advantages of using alkylsilyl leaving groups in MOCVD. Aluminum nitride (AlN) possess a wide Fermic band gap, high thermal conductivity, high refractivity, chemical inertness, and a good thermal match to silicon; these properties make it an ideal material for electronic packaging. It also has application in passivation layers, dielectric layers, piezoelectric films, and nonelectronic applications. This study of improved deposition technology for AlN could also have applicability to other materials desired in thin-film form.//

这项工作的重点是通过金属有机化学气相沉积 (MOCVD) 生长和加工氮化铝 (AlN)，这是一种技术上重要的 III-V 族化合物。 研究了一系列烷基铝和烷基甲硅烷基铝化合物在选定基材上的吸附、分解和热稳定性。 随后衍生化的底物与氮化物气体（氨或肼）反应以促进前体形成；然后前体进一步反应形成 AlN 的二维低聚物。 通过高压和超高真空表面分析技术来探测沉积过程每个阶段的能量和中间体。 目标包括在低基底温度下有序生长的要求、使用改性基底作为位点选择性吸附的模板、更容易的氮化气体以及在 MOCVD 中使用烷基甲硅烷基离去基团的优点。 氮化铝（AlN）具有宽费米带隙、高导热率、高折射率、化学惰性以及与硅良好的热匹配性；这些特性使其成为电子封装的理想材料。 它还可用于钝化层、介电层、压电薄膜和非电子应用。 这项改进氮化铝沉积技术的研究也适用于其他所需的薄膜材料。//