The Growth and Characterization of GaN and InGaN Structures by Selective-Area Metalorganic Chemical Vapor Deposition

9714289 Li这个CAA项目解决了GaN和InGaN的选择性区域化学气相沉积。PI是一位化学家，计划发展和扩大她在III族氮化物半导体研究外延领域的科学专业知识，这将使她能够为该领域带来跨学科的方法和见解。她希望进入积极的研究制造低维结构，如量子威尔斯，线和点，并研究量子尺寸对光学和电学性质的影响。她的长期目标是开发具有新特性和潜在应用的新的和更好的材料，促进对III-V族半导体材料特性的理解，并为实现III族氮化物以及其他III-V族半导体在器件应用中的全部潜力做出贡献。本计画将探讨InGaN薄膜的光学性质与缺陷及杂质分布的相关性，并在单条纹及双条纹图案上进行InGaN薄膜的选择性成长。并研究了选择性生长对GaN中Si_2 H_6和Cp_2 Mg掺杂行为的影响。该项目解决了材料科学和工程研究问题，在材料科学领域具有高度的技术相关性。 该研究将在基础层面上为电子/光子器件和集成电路的重要方面提供基础材料科学知识。 此外，从研究中获得的基础知识和理解有望通过提供设计和生产改进材料的基本理解和基础，有助于提高先进设备的性能。***

9714289 Li This CAA project addresses selective area chemical vapor deposition of GaN and InGaN. The PI is a chemist planning to develop and expand her scientific expertise in the field of epitaxy of III-nitride semiconductor research, which will allow her to bring interdisciplinary approaches and insights to the field. She expects to move into active research fabricating low dimensional structures such as quantum wells, wires and dots and to study the quantum size effect on optical and electrical properties. Her long range goal is to develop new and better materials that have novel properties and potential applications, to advance the understanding of III-V semiconductor materials properties and to contribute to the realization of the full potential of III-nitride as well as other III-V semiconductors in device applications. In this project the correlation of optical properties with defect and impurity distributions will be explored, the selective growth of InGaN films will be carried out on single and dual stripe patterns., and the effect of selective growth on the doping behavior of Si2H6 and Cp2Mg in GaN will be studied as a function of mesa size and geometry. %%% The project addresses materials science and engineering research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuits. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials. ***