The Growth and Characterization of GaN and InGaN Structures by Selective-Area Metalorganic Chemical Vapor Deposition

选择性区域金属有机化学气相沉积 GaN 和 InGaN 结构的生长和表征

• 批准号: 9714289
• 负责人: Xiuling Li
• 金额: $ 6万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1997
• 资助国家: 美国
• 起止时间: 1997-07-15 至 1999-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9714289&HistoricalAwards=false
• 关键词: Growth; Characterization; GaN; InGaN; Structures

9714289 Li This CAA project addresses selective area chemical vapor deposition of GaN and InGaN. The PI is a chemist planning to develop and expand her scientific expertise in the field of epitaxy of III-nitride semiconductor research, which will allow her to bring interdisciplinary approaches and insights to the field. She expects to move into active research fabricating low dimensional structures such as quantum wells, wires and dots and to study the quantum size effect on optical and electrical properties. Her long range goal is to develop new and better materials that have novel properties and potential applications, to advance the understanding of III-V semiconductor materials properties and to contribute to the realization of the full potential of III-nitride as well as other III-V semiconductors in device applications. In this project the correlation of optical properties with defect and impurity distributions will be explored, the selective growth of InGaN films will be carried out on single and dual stripe patterns., and the effect of selective growth on the doping behavior of Si2H6 and Cp2Mg in GaN will be studied as a function of mesa size and geometry. %%% The project addresses materials science and engineering research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices and integrated circuits. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices by providing a fundamental understanding and a basis for designing and producing improved materials. ***

9714289 Li这个CAA项目研究GaN和InGaN的选择性区域化学气相沉积。PI是一位化学家，计划在iii -氮化物半导体外延研究领域发展和扩展她的科学专业知识，这将使她能够为该领域带来跨学科的方法和见解。她希望积极研究制造低维结构，如量子阱、量子线和量子点，并研究量子尺寸对光学和电学性质的影响。她的长期目标是开发具有新特性和潜在应用的新型和更好的材料，促进对III-V半导体材料特性的理解，并有助于实现iii -氮化物以及其他III-V半导体在器件应用中的全部潜力。在这个项目中，将探索光学性质与缺陷和杂质分布的相关性，并在单条纹和双条纹模式上进行InGaN薄膜的选择性生长。以及选择性生长对Si2H6和Cp2Mg在GaN中掺杂行为的影响，将作为台面尺寸和几何形状的函数进行研究。该项目涉及材料科学领域的材料科学和工程研究问题，具有很高的技术相关性。该研究将为电子/光子器件和集成电路的重要方面提供基础材料科学知识。此外，从研究中获得的基本知识和理解有望通过为设计和生产改进材料提供基本理解和基础，从而有助于提高先进设备的性能。＊＊＊