Ion and Thermal-Induced Transformations in Metal Systems

9307662将对III-V半导体和铜-硅系统中的离子和热诱导转变/反应进行迈耶基础材料科学研究。研究了合金元素在铜中的反应和在Cu3Si/Si中形成氧化物的反应。铜中合金化元素的研究将是将铜用于集成电路金属化的一个重要因素，因为它具有附着力和形成扩散势垒的作用。在低工艺温度下控制氧化层的形成可以提供一种在硅上形成这种氧化物的方法。由于Si注入的GaAs的电激活是注入剂量率和衬底温度的敏感函数，因此我们计划结合电子显微镜、电分析和离子沟道来研究离子诱导的缺陷相互作用。了解离子注入的GaAs中的掺杂激活对集成电路的应用是很重要的。将研究基本的离子-固体相互作用以及影响半导体材料组合的电子和光学性能的因素，这些材料组合在电子和光子学应用中具有潜在的优势。正在研究的半导体材料组合在电子和光电子器件中具有广泛的适用性；因此，研究结果有望为继续改进用于计算、信息处理和电信的先进器件和集成电路的性能提供基础。***

9307662 Mayer Fundamental materials science investigations of ion- and thermal-induced transformations/reactions in III-V semiconductors and copper-silicon systems will be conducted. It is proposed to investigate the reactions of alloying elements in Cu and oxide formation in Cu3Si/Si. The study of alloying elements in Cu will be an important factor in the use of Cu for integrated circuit metallization for adhesion and formation of diffusion barriers. The controlled formation of oxide layers at low process temperatures may offer a method to form this oxide on silicon. Since electrical activation of Si-implanted GaAs is a sensitive function of implantation dose-rate and substrate temperature it is planned to investigate ion induced defect interaction by the combined use of electron microscopy, electrical analysis and ion channeling. %%% An understanding of dopant activation in ion-implanted GaAs is important to integrated circuit applications. Research will be conducted on fundamental ion-solid interactions as well as factors that influence the electronic and optical properties of semiconductor material combinations with potential advantages in electronics and photonics applications. The semiconductor material combinations under study have wide applicability in electronic and optoelectronic devices; thus the research results are expected to provide the basis for continued improvements in the performance of advanced devices and integrated circuits of the type used in computing, information processing, and telecommunications. ***