Metallization and Contact Formation for Silicon Technology

小行星9528391 这个合作的多学科研究项目解决了硅基系统中的金属化和接触形成：与Cu相比，Ag膜作为互连金属化的性质的研究，以及绝缘体上硅（SOI）结构的浅接触的硅化物形成。 其目的是调查的基本性质的Ag基形成的自钝化层，粘附性，和扩散障碍，利用难熔金属添加剂与广泛的一系列调查的Cu金属化与Ti添加进行比较。 在绝缘体上硅（SOI）结构上形成硅化物对自对准硅化物的材料有严格的要求（SALICIDE）技术，并且本研究的目的是研究CoSix（x1）/Ti系统以绕过形成CoSi，从而减少空隙形成，研究使用Pd而不是Ti作为插入薄层以形成外延CoSi 2层，并研究了SOI结构中Si外延层中较薄层的应力。 透射电子显微镜，离子束分析（RBS和沟道），和电气诊断都将被例行表征薄膜和结构的合成和制造过程中的研究。 金属化和接触形成的拟议基础研究预计将有助于先进的微电子器件和电路的技术相关的基础材料科学知识。 从这个研究项目中获得的知识和理解，预计将有助于在一般的方式，以提高性能的先进设备和电路用于计算，信息处理和电信提供一个基本的理解和基础，设计和生产改进的材料。 该计划的一个重要特点是通过在一个基础和技术重要领域培训学生来整合研究和教育。 ***

9528391 Mayer This collaborative multidisciplinary research project addresses metallization and contact formation in silicon- based systems: investigation of the properties of Ag films as interconnecting metallization in comparison with Cu, and silicide formation for shallow contacts to Si on insulator(SOI) structures. The objective is to investigate the fundamental properties of Ag-based formation of self- passivating layers, adhesion, and diffusion barriers utilizing refractory metal additions in comparison with an extensive series of investigations of Cu metallization with Ti addition conducted previously. Silicide formation on Si on insulator(SOI) structures has stringent materials requirements for the self-aligned-silicide(SALICIDE) technology, and the objective of this study is to investigate the CoSix(x1)/Ti system to bypass the formation CoSi, thus reducing void formation, to investigate the use of Pd rather than Ti as an interposing thin layer to form epitaxial CoSi2 layers, and to investigate the stress in thinner layers of the Si epi-layers in the SOI structure. Transmission electron microscopy, ion beam analysis(RBS and channeling), and electrical diagnostics will all be employed routinely to characterize films and structures synthesized and fabricated during the course of the research. %%% The proposed basic investigations of metallization and contact formation are expected to contribute basic materials science knowledge of technological relevance to advanced microelectronic devices and circuits. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of st udents in a fundamentally and technologically significant area. ***