Metallization and Contact Formation for Silicon Technology

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9528391 Mayer This collaborative multidisciplinary research project addresses metallization and contact formation in silicon- based systems: investigation of the properties of Ag films as interconnecting metallization in comparison with Cu, and silicide formation for shallow contacts to Si on insulator(SOI) structures. The objective is to investigate the fundamental properties of Ag-based formation of self- passivating layers, adhesion, and diffusion barriers utilizing refractory metal additions in comparison with an extensive series of investigations of Cu metallization with Ti addition conducted previously. Silicide formation on Si on insulator(SOI) structures has stringent materials requirements for the self-aligned-silicide(SALICIDE) technology, and the objective of this study is to investigate the CoSix(x1)/Ti system to bypass the formation CoSi, thus reducing void formation, to investigate the use of Pd rather than Ti as an interposing thin layer to form epitaxial CoSi2 layers, and to investigate the stress in thinner layers of the Si epi-layers in the SOI structure. Transmission electron microscopy, ion beam analysis(RBS and channeling), and electrical diagnostics will all be employed routinely to characterize films and structures synthesized and fabricated during the course of the research. %%% The proposed basic investigations of metallization and contact formation are expected to contribute basic materials science knowledge of technological relevance to advanced microelectronic devices and circuits. The knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved materials. An important feature of the program is the integration of research and education through the training of st udents in a fundamentally and technologically significant area. ***