Plasma Enhanced Chemical Vapor Deposition of Nanocrystalline Silicon Thin Films

纳米晶硅薄膜的等离子体增强化学气相沉积

• 批准号: 9360138
• 负责人: Russell Hollingsworth
• 金额: $ 6.5万
• 依托单位: Materials Research Group Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-01-15 至 1994-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9360138&HistoricalAwards=false
• 关键词: Plasma; Enhanced; Chemical; Vapor; Deposition

9360138 Hollingsworth The recent observation of efficient visible luminescence form nanometer sized silicon crystallites has generated a great deal of excitement in the semiconductor community. The emission of light about the bandgap of silicon is generally attributed to quantum confinement of carriers in crystallites with dimensions less than 5nm. This research project will examine plasma enhanced chemical vapor deposition as a method of producing nanocrystalline silicon thin films exhibiting visible luminescence. Heavily doped micro crystalline films grown by plasma enhanced chemical vapor deposition have been studied for many years for use in amorphous silicon photovoltaics. The micro crystalline films consist of crystals with typical grain sizes less than 10nm surrounded by an amorphous silicon matrix. It has been shown that removal of the amorphous matrix leaves nanocrystalline silicon with visible luminescence. Undoped, p, and n type micro crystalline films will be grown by plasma enhanced chemical vapor deposition with subsequent etching of the amorphous matrix to leave nanocrystalline research, with the ultimate goal in Phase II of producing light emitting diodes on glass substrated for large area flat panel display applications.

小行星9360138 最近观察到的纳米硅微晶的有效可见光发光在半导体界引起了很大的兴奋。 硅带隙附近的光发射通常归因于尺寸小于5nm的微晶中载流子的量子限制。 本研究计画将探讨电浆增强化学气相沈积法，以制作具有可见光发光的奈米矽薄膜。 用等离子体增强化学气相沉积法生长的重掺杂微晶薄膜在非晶硅光致发光器件中的应用已经研究了很多年。 微晶薄膜由典型晶粒尺寸小于10 nm的晶体组成，并被非晶硅基质包围。 已经表明，去除非晶基质留下具有可见发光的纳米晶硅。 未掺杂的p型和n型微晶膜将通过等离子体增强化学气相沉积生长，随后蚀刻非晶基质以留下纳米晶研究，第二阶段的最终目标是在玻璃衬底上生产用于大面积平板显示器应用的发光二极管。