GOALI: In-situ Real Time Studies of Silicide Growth Kinetics in Submicron Structures

9515181 Ludwig该提案是GOALI的一项努力，重点是亚微米硅器件结构中硅化物动力学的实时原位研究。 建议的研究将集中在Ti和Co与重掺杂硅衬底的界面反应的研究。 研究将针对不同的几何阵列和形状组合的生长动力学。 实验将进行原位，时间分辨，X射线散射测量，研究硅化物的快速热退火条件下的图案化submircron器件结构的转变动力学。 这项研究的结果将导致硅化物形成的基本理解，这是一个基本的技术，为微电子。行业 ***

9515181 Ludwig The proposal is a GOALI effort with a focus on real-time, in-situ studies of silicide kinetics in submicron silicon device structure. The proposed research will concentrate on the study of Ti and Co interface reactions with heavily-doped silicon substrates. Studies will be directed towards growth kinetics with different geometrical arrays and shape combinations. Experiments will be performed with in-situ, time-resolved, x-ray scattering measurements, to study the silicide transformation kinetics under rapid thermal annealing conditions on patterned submircron device structures. The results of this study should lead to a fundamental understanding of silicide formation, which is an essential technology for the microelectronics. industry. ***