Coherent X-ray Studies of Surface Growth and Patterning Processes
Coherent X-ray Studies of Surface Growth and Patterning Processes
批准号:
1709380
负责人:
Karl Ludwig
金额:
$27.11万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-08-01 至 2020-07-31
中文摘要
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英文摘要
Nontechnical description: Controlling the growth and nanometer-scale patterning of materials surfaces is critical to many applications in energy, communication and information technologies. However, a major impediment to developing more useful materials is the difficulty of measuring the evolution of surface structure during such processes. This research meets that challenge by using very intense x-rays to measure the nanometer-scale dynamics on surfaces during growth and patterning. These experiments are made possible by the use of the latest x-ray sources, which have been rapidly developing increasing brightness. The experimental measurements are compared with predictions of theory and computer simulations, leading to increased understanding and predictive power. Such knowledge can help scientists and engineers better control surface processes on materials, enhancing their technological capabilities. In addition, the project trains graduate, undergraduate and high school students in this very important and rapidly developing part of materials research, leading to future careers in materials innovation.Technical description: This research is developing x-ray photon correlation spectroscopy as a powerful new approach to investigating the nanoscale dynamics of surfaces during growth and ion beam patterning. Given the technique?s early stage of application to such challenging problems, it is important to examine the range of its capabilities. This project is therefore investigating a carefully chosen set of systems and behaviors. First, it is being used to carefully probe the fundamental processes in kinetic roughening during amorphous film growth, an issue of long-standing interest and controversy. Second, the applicability of the technique to investigating epitaxial growth processes is being examined within the context of vapor deposition of organic semiconductor films and plasma-assisted atomic layer epitaxial growth of III-V nitride epitaxial films. Finally, the dynamics of semiconductor ion beam nanopatterning, an issue generating unusually close interaction between experiment and theory, is being studied. In all cases, simulations of continuum and atomistic models are being performed to relate observations to underlying mechanisms. Graduate, undergraduate and high school students involved have an outstanding opportunity to work in an area that bridges basic research and application. Participating students learn a wide range of characterization and computational tools that can translate well to future careers in industry or academia.
期刊论文(4)
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Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering
原位掠入射小角X射线散射评估温度对氮化铟原子层外延生长的影响
DOI:
10.1116/1.5081919
发表时间:
2019
期刊:
Journal of Vacuum Science & Technology A
影响因子:
2.9
作者:
[Woodward, Jeffrey M., Rosenberg, Samantha G., Kozen, Alexander C., Nepal, Neeraj, Johnson, Scooter D., Wagenbach, Christa, Rowley, Andrew H., Robinson, Zachary R., Joress, Howie, Ludwig, Karl F.]
通讯作者:
Ludwig, Karl F.
Nanoscale kinetics and dynamics during Ar+ patterning of SiO2
SiO2 Ar 图案化过程中的纳米级动力学和动力学
DOI:
10.1103/physrevb.99.165429
发表时间:
2019
期刊:
Physical Review B
影响因子:
3.7
作者:
[Mokhtarzadeh, Mahsa, Ulbrandt, Jeffrey G., Myint, Peco, Narayanan, Suresh, Headrick, Randall L., Ludwig, Karl F.]
通讯作者:
Ludwig, Karl F.
Low temperature surface preparation of GaN substrates for atomic layer epitaxial growth: Assessment of ex situ preparations
用于原子层外延生长的 GaN 衬底的低温表面制备:异位制备的评估
DOI:
10.1116/1.5080090
发表时间:
2019
期刊:
Journal of Vacuum Science & Technology A
影响因子:
2.9
作者:
[Rosenberg, Samantha G., Pennachio, Daniel J., Wagenbach, Christa, Johnson, Scooter D., Nepal, Neeraj, Kozen, Alexander C., Woodward, Jeffrey M., Robinson, Zachary, Joress, Howie, Ludwig, Karl F.]
通讯作者:
Ludwig, Karl F.
DOI:
10.1038/s41467-019-10629-8
发表时间:
2019-06-14
期刊:
NATURE COMMUNICATIONS
影响因子:
16.6
作者:
[Headrick, Randall L., Ulbrandt, Jeffrey G., Ludwig, Karl F., Jr.]
通讯作者:
Ludwig, Karl F., Jr.
REU Site: BU-PRO: Boston University Physics Research Opportunities
-
批准号:2244795
-
项目类别:Standard Grant
-
资助金额:$51.59万
-
财政年份:2023
-
负责人:Karl Ludwig
-
依托单位:
Collaborative Research: Highly Ordered Nanoscale Patterns Produced by Ion Bombardment of Solid Surfaces: Theory and Experiment
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批准号:2117509
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项目类别:Continuing Grant
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资助金额:$31.5万
-
财政年份:2022
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负责人:Karl Ludwig
-
依托单位:
REU Site: BU-PRO: Boston University Physics Research Opportunities
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批准号:1852266
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项目类别:Continuing Grant
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资助金额:$33.58万
-
财政年份:2019
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负责人:Karl Ludwig
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依托单位:
Surface Nanopatterning by Ion Bombardment
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批准号:1307979
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项目类别:Continuing Grant
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资助金额:$33.83万
-
财政年份:2013
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负责人:Karl Ludwig
-
依托单位:
MRI: Acquisition of an Advanced Materials X-ray Diffraction System
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批准号:1337471
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项目类别:Standard Grant
-
资助金额:$45.5万
-
财政年份:2013
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负责人:Karl Ludwig
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依托单位:
Self-Organized Nanostructure Growth during Ion Bombardment
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批准号:1006538
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项目类别:Standard Grant
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资助金额:$29.9万
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财政年份:2010
-
负责人:Karl Ludwig
-
依托单位:
Coherent X-Ray Scattering Studies of Phase Transitions in Metals
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批准号:0508630
-
项目类别:Continuing Grant
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资助金额:$30.0万
-
财政年份:2005
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负责人:Karl Ludwig
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依托单位:
Real-time X-ray Studies of Surface Evolution During Ion Bombardment and Plasma Processing
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批准号:0507351
-
项目类别:Continuing Grant
-
资助金额:$0.0万
-
财政年份:2005
-
负责人:Karl Ludwig
-
依托单位:
In-situ X-ray Studies of Surface Structure during Plasma Processing
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批准号:0208011
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项目类别:Continuing Grant
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资助金额:$32.19万
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财政年份:2002
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负责人:Karl Ludwig
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依托单位:
Development of a System for Studies of Surface Structure during Plasma Processing and Student Training
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批准号:0114154
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项目类别:Standard Grant
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资助金额:$8.4万
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财政年份:2001
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负责人:Karl Ludwig
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依托单位:
MRI: Development of a Surface Scattering System for Real-time X-ray Studies of Growth and Processing
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批准号:0116567
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项目类别:Standard Grant
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资助金额:$12.0万
-
财政年份:2001
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负责人:Karl Ludwig
-
依托单位:
Kinetics of Phase Transformations
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批准号:9633596
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项目类别:Continuing Grant
-
资助金额:$29.35万
-
财政年份:1996
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负责人:Karl Ludwig
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依托单位:
GOALI: In-situ Real Time Studies of Silicide Growth Kinetics in Submicron Structures
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批准号:9515181
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项目类别:Continuing Grant
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资助金额:$29.5万
-
财政年份:1996
-
负责人:Karl Ludwig
-
依托单位:
国内基金
海外基金
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基于慧眼-HXMT宽能段观测的X射线吸积脉冲星磁场研究
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批准号:42107329
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批准号:42007010
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