MRI: Development of a Surface Scattering System for Real-time X-ray Studies of Growth and Processing

该奖项资助了一个系统的开发，用于分子束外延（MBE）薄膜生长和等离子体处理表面改性的原位同步X射线研究。该系统将允许广泛的X射线进入样品，并结合标准表征工具（如RHEED），以更好地将同步加速器结果与内部研究相关联。 在薄膜生长领域，特别注意的是在MBE生长的III-V族氮化物薄膜，GaN和Ga-Al-In氮化物合金的表面结构。除其他问题外，研究将集中在缓冲层的形成和合金系统中的原子有序/相分离。 在等离子体处理过程中的表面结构的调查将首先集中在硅，因为它已被广泛研究的补充方法。 未来的实验将针对化合物半导体表面的处理，例如砷化物和氮化物的表面。 使用该系统培训的学生将接触到广泛的材料问题，从基本的表面结构研究到了解表面结构如何影响器件性能。他们将为毕业后将他们的经验和新见解带到工业界和学术界做好充分的准备。该奖项资助了表面散射系统的开发，用于生长和加工的实时X射线研究。该系统将能够对半导体行业至关重要的两个过程进行基础研究。这些是，首先，分子束外延，它允许一次一个原子层的薄膜的高度控制的生长，第二，在一组过程中，被统称为“等离子体处理”的高能粒子的表面改性。使用来自同步加速器源的非常强的X射线束，将研究表面的原子结构，因为这些技术上重要的过程正在发生。从这些实验中获得的基本理解可能最终导致为光电子和高功率工业生长新的高质量材料的方法，以及在整个电子工业中蚀刻和钝化半导体表面的更好方法。 此外，该设备将提供一个独特的资源，以培养学生在这些快速发展的跨学科领域，跨越物理学，材料科学和电气工程的传统界限。

This award funds the development of a system for the in-situ synchrotron x-ray study of thin film growth with molecular beam epitaxy (MBE) and of surface modification with plasma processing. The system will permit extensive x-ray access to the sample and incorporate standard characterization tools (e.g. RHEED) to better correlate the synchrotron results with in-house studies. In the area of film growth, particular attention is paid to surface structure during the MBE growth of III-V nitride films, both GaN and Ga-Al-In nitride alloys. Among other issues, research will focus on buffer layer formation and atomic ordering/phase separation in the alloy systems. Investigations of surface structure during plasma processing will initially focus on silicon, since it has been widely studied with complementary methods. Future experiments will be directed at processing of compound semiconductor surfaces, such as those of the arsenides and nitrides. Students trained with the system will be exposed to a broad range of materials issues ranging from basic surface structure research to understanding how surface structure can effect device performance. They will be well prepared to bring their experience and new insights to industry and academia following graduation.This award funds the development of a surface scattering system for real-time x-ray studies of growth and processing. The system will enable the fundamental study of two processes that are vital for the semiconductor industry. These are, first, Molecular Beam Epitaxy, which allows the highly controlled growth of thin films a single atomic layer at a time, and, second, the modification of surfaces with energetic particles in a set of processes that is known collectively as "plasma processing". Using a very intense beam of x-rays from a synchrotron source, the atomic structure of surfaces will be investigated as these technologically important processes are occurring. The basic understanding gained from these experiments may eventually lead to methods for growing new high quality materials for the optoelectronics and high power industries and to better methods of etching and passivating semiconductor surfaces throughout the electronics industry. In addition, this equipment will provide a unique resource to train students in these rapidly developing interdisciplinary areas that cut across traditional boundaries of physics, materials science and electrical engineering.