3D Integration of Nonvolatile Nanomagnetic Logic
3D Integration of Nonvolatile Nanomagnetic Logic
批准号:
114933698
负责人:
Professorin Dr. Doris Schmitt-Landsiedel
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2009
资助国家:
德国
项目状态:
已结题
起止时间:
2008-12-31 至 2015-12-31
中文摘要
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英文摘要
Magnetic field-coupling is an emerging, new paradigm of nanoscale computing, where information is propagated and processed by the magnetic interaction of single-domain magnetic particles. The feasibility of this concept has been recently demonstrated experimentally by a magnetic majority gate, which was lithographically fabricated from Permalloy dots. We have shown theoretically that magnetic field-coupled circuits can achieve fast and densely integrated computing which dissipates only few kT power per switching.Our goal is the design and experimental demonstration of field coupled circuits, which are based on ion-beam patterned magnetic multilayers. Such multilayers exhibit strong out-ofplane anisotropy, which is very desirable from the architectural point of view, and the magnetic properties of the layers / dots can be fine-tuned and improved by ion irradiation. Magnetic characteristics of the dots are well-controlled, which makes the realization of complex field-coupled structures feasible.We are going to realize not only a stand-alone device, but a small, albeit complete magnetic computing system. We put special focus on the design and fabrication of electrical inputs / outputs and an integrated clocking system. Submicron-scale electrical wires, buried under the magnetic layers will provide clocking fields for synchronized switching of magnets.Our research could result in a new family of magnetoelectronic devices with far-reaching application potential in low-power computing. The fabrication of magnetic computing components is compatible with silicon technologies and they can enhance the functionality of microelectronic devices.
期刊论文(7)
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DOI:
10.1063/1.4857555
发表时间:
2014
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Breitkreutz, Eichwald, Kiermaier, Schmitt-Landsiedel, Becherer]
通讯作者:
Becherer
Towards on-chip clocking of perpendicular Nanomagnetic Logic
面向垂直纳米磁逻辑的片上时钟
DOI:
10.1016/j.sse.2014.06.012
发表时间:
2014
期刊:
影响因子:
--
作者:
[Becherer, Kiermaier, Breitkreutz, Eichwald, Ziemys, Schmitt-Landsiedel]
通讯作者:
Schmitt-Landsiedel
Towards nonvolatile magnetic crossbar arrays: A three-dimensional-integrated field-coupled domain wall gate with perpendicular anisotropy
走向非易失性磁交叉阵列:具有垂直各向异性的三维集成场耦合畴壁门
DOI:
10.1063/1.4913729
发表时间:
2015
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Breitkreutz, Eichwald, Ziemys, Hiblot, Schmitt- Landsiedel, Becherer]
通讯作者:
Becherer
Time-dependent domain wall nucleation probability in field-coupled nanomagnets with perpendicular anisotropy
具有垂直各向异性的场耦合纳米磁体中随时间变化的畴壁成核概率
DOI:
10.1063/1.4906440
发表时间:
2015
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Breitkreutz, Fischer, Eichwald, Ziemys, Schmitt-Landsiedel, Becherer]
通讯作者:
Becherer
Controlled domain wall pinning in nanowires with perpendicular magnetic anisotropy by localized fringing fields
通过局部边缘场控制具有垂直磁各向异性的纳米线中的畴壁钉扎
DOI:
10.1063/1.4864737
发表时间:
2014
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Breitkreutz, Eichwald, Kiermaier, Hiblot, Schmitt-Landsiedel, Becherer]
通讯作者:
Becherer
共 7 条
Design of Circuits and Systems for Nonvolatile Nanomagnetic Logic
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批准号:229838035
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项目类别:Research Grants
-
资助金额:$0.0万
-
财政年份:2013
-
负责人:Professorin Dr. Doris Schmitt-Landsiedel
-
依托单位:
Analog circuits with time varying parameters caused by device aging and gate currents: modelling of impact on circuit behaviour; assessment and development of countermeasures.
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批准号:191845808
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项目类别:Research Grants
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资助金额:$0.0万
-
财政年份:2011
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负责人:Professorin Dr. Doris Schmitt-Landsiedel
-
依托单位:
Kompensation von On-Chip Parameterschwankungen durch lokale Spannungsanpassung aufgrund von in-situ Verzögerungsmessungen in integrierten CMOS Schaltungen
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批准号:72373842
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项目类别:Research Grants
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资助金额:$0.0万
-
财政年份:2008
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负责人:Professorin Dr. Doris Schmitt-Landsiedel
-
依托单位:
Senkung der Verlustleistung in energierückgewinnender Logik durch abschaltbare Spannungsversorgung
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批准号:60699735
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项目类别:Research Grants
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资助金额:$0.0万
-
财政年份:2007
-
负责人:Professorin Dr. Doris Schmitt-Landsiedel
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依托单位:
Der Tunneltransistor in matrixförmigen Schaltungen und Sensoren
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批准号:5272596
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项目类别:Research Units
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资助金额:$0.0万
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财政年份:2000
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负责人:Professorin Dr. Doris Schmitt-Landsiedel
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依托单位:
Zentrale Dienste
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批准号:5272664
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项目类别:Research Units
-
资助金额:$0.0万
-
财政年份:2000
-
负责人:Professorin Dr. Doris Schmitt-Landsiedel
-
依托单位:
Niederohmige, elektromigrationsfeste Silberstrukturen für die Mikroelektronik
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批准号:5272462
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项目类别:Research Units
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资助金额:$0.0万
-
财政年份:2000
-
负责人:Professorin Dr. Doris Schmitt-Landsiedel
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依托单位:
Analysis and optimization of parametric yield for low-power circuits
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批准号:5173702
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项目类别:Priority Programmes
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资助金额:$0.0万
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财政年份:1999
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负责人:Professorin Dr. Doris Schmitt-Landsiedel
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依托单位:
海外基金