Growth of Gallium Nitride and Related Materials at Subatmospheric Pressures

氮化镓及相关材料在低于大气压下的生长

• 批准号: 9901419
• 负责人: John Angus
• 金额: $ 39.47万
• 依托单位: Case Western Reserve University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-07-01 至 2003-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9901419&HistoricalAwards=false
• 关键词: Growth; Gallium; Nitride; Related; Materials

This project addresses new methods for crystallization of the group III nitrides from the melt. Activities include: growth of bulk polycrystalline and single crystal gallium nitride and indium nitride; synthesis of thick and thin film GaN and InN on substrates; and optical, electronic, and structural characterization of the crystals. The aim is to provide an attractive alternative to the current high pressure process for synthesis of bulk group III nitrides; increased understanding of the phase relationships in the group III/nitrogen systems; and further insights into the role of alloying, impurities, defects, and grain boundaries on light emission from the group III nitrides. The approach is to use atomic nitrogen to produce saturated melts of gallium (or indium) from which GaN (or InN) can be crystallized. The decomposition of GaN and InN to the elements is suppressed at low pressures if the crystals are in contact with the nitrogen saturated melt. A main focus of the research will be to achieve stable growth of single crystals and single crystal films through control of temperature and concentration gradients. Horizontal gradient freezing and growth through thin liquid films (a form of liquid phase epitaxy) will be the principal methods employed. Third elements, e.g., In and Sn, will be used to suppress the liquidus temperature and enhance nitrogen solubility. Doping studies will be attempted by including small, controlled amounts of dopants, e.g., Mg and Si, in the original liquid metal. The synthetic work will be complemented by concurrent electrical, optical and structural characterization.%%%The project addresses basic research issues in a topical area of materials science having high potential technological relevance. The research will contribute basic materials science knowledge at a fundamental level to important fabrication aspects of electronic/photonic devices. New experimental materials science and optical tools are now available to allow new approaches which when better understood provide advances in fundamental science and technology. The basic knowledge and understanding gained from the research is expected to contribute to improving the perform-ance of advanced devices and circuits for computing and communications. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area.***

该项目致力于从熔体中结晶III族氮化物的新方法。活动包括：生长块状多晶和单晶氮化镓和氮化铟;在衬底上合成厚膜和薄膜GaN和InN;以及晶体的光学、电子和结构表征。其目的是提供一个有吸引力的替代目前的高压工艺合成散装第III族氮化物;增加理解的相关系在第III族/氮系统;和进一步的洞察合金化，杂质，缺陷和晶界的作用，从第III族氮化物的光发射。该方法是使用原子氮来产生镓（或铟）的饱和熔体，从中可以结晶GaN（或InN）。如果晶体与氮饱和熔体接触，则GaN和InN分解成元素在低压下被抑制。研究的主要焦点将是通过控制温度和浓度梯度来实现单晶和单晶膜的稳定生长。水平梯度凝固和通过薄液膜的生长（液相外延的一种形式）将是所采用的主要方法。第三要素，例如，In和Sn将用于抑制液相线温度并提高氮溶解度。掺杂研究将尝试通过包括少量、受控量的掺杂剂，例如，Mg和Si，在原始液态金属中。合成工作将通过同时进行的电学、光学和结构表征得到补充。%该项目涉及材料科学专题领域的基础研究问题，具有很高的潜在技术相关性。该研究将在基础水平上为电子/光子器件的重要制造方面提供基础材料科学知识。 新的实验材料科学和光学工具，现在可以允许新的方法，当更好地理解提供基础科学和技术的进步。从研究中获得的基本知识和理解有望有助于提高先进计算和通信设备和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。