Strukturnahe Modellierung von Nanoscale Multiple-Gate FETs zur Schaltungssimulation

对于集成电路的仿真，网络仿真器中使用了所谓的紧凑模型。它们允许在合理的计算时间内分析复杂的电路。为了提高数值效率，需要对建模时必须考虑的物理效应进行深入研究，而这些物理效应可以忽略不计。通过对原始项目提案的扩展，多栅极FET的分析建模目标通过引入新型器件结构（如无结MOSFET）得到了补充。该项目重点关注以下效应的建模：- 多栅MOSFET中的载流子约束-弹道载流子输运-SOI结构中的自热效应。

For the simulation of integrated circuits are so-called compact models used in network simulators. They allow analysis of complex circuits in a reasonable computation time. The demand for numerical efficiency requires a thorough investigation of physical effects which must be taken into account in modeling and which in contrast can be neglected.Through the extension of the project with respect to the original project proposal the objectives for analytical modeling of multiple-gate FETs are complemented by the inclusion of novel device structures such as junction-less MOSFETs.The project focuses on modeling of the following effects:- carrier confinement in multiple-gate MOSFETs- ballistic carrier transport- self-heating effects in SOI structures.Furthermore model equations for intrinsic capacitances will be derived.