Strukturnahe Modellierung von Nanoscale Multiple-Gate FETs zur Schaltungssimulation

用于电路仿真的纳米级多栅极 FET 的结构建模

• 批准号: 182932826
• 负责人: Professor Dr.-Ing. Alexander Klös
• 金额: --
• 依托单位: Kompetenzzentrum für Nanotechnik und Photonik (NanoP)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2010
• 资助国家: 德国
• 起止时间: 2009-12-31 至 2012-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/182932826?language=en
• 关键词: Strukturnahe; Modellierung; von; Nanoscale; Multiple

For the simulation of integrated circuits are so-called compact models used in network simulators. They allow analysis of complex circuits in a reasonable computation time. The demand for numerical efficiency requires a thorough investigation of physical effects which must be taken into account in modeling and which in contrast can be neglected.Through the extension of the project with respect to the original project proposal the objectives for analytical modeling of multiple-gate FETs are complemented by the inclusion of novel device structures such as junction-less MOSFETs.The project focuses on modeling of the following effects:- carrier confinement in multiple-gate MOSFETs- ballistic carrier transport- self-heating effects in SOI structures.Furthermore model equations for intrinsic capacitances will be derived.

对于集成电路的仿真，网络仿真器中使用了所谓的紧凑模型。它们允许在合理的计算时间内分析复杂的电路。对数值效率的需求需要对物理效应进行彻底的研究，在建模中必须考虑物理效应，而相比之下，物理效应可以被忽略。通过项目相对于原始项目提案的扩展，多栅极 FET 分析建模的目标通过纳入无结 MOSFET 等新型器件结构得到补充。该项目重点对以下效应进行建模：- 多栅极 MOSFET 中的载流子限制 - 弹道 SOI 结构中的载流子传输-自热效应。还将导出本征电容的进一步模型方程。

项目成果

Threshold voltage, and 2D potential modeling within short-channel junctionless DG MOSFETs in subthreshold region

• DOI: 10.1016/j.sse.2013.02.044
• 发表时间: 2013-12
• 期刊: Solid-state Electronics
• 影响因子: 1.7
• 作者: T. Holtij;M. Schwarz;A. Kloes;B. Iñíguez

Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETs

• DOI: 10.1109/ted.2013.2281615
• 发表时间: 2014-02-01
• 期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
• 影响因子: 3.1
• 作者: Holtij, Thomas;Graef, Michael;Iniguez, Benjamin
• 通讯作者: Iniguez, Benjamin

Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs

轻掺杂双栅极 MOSFET 中二维静电的分析紧凑建模框架

• DOI: 10.1016/j.sse.2011.11.023
• 发表时间: 2012
• 期刊: Solid-state Electronics
• 影响因子: 1.7
• 作者: M. Schwarz;T. Holtij;A. Kloes;B. Iñíguez
• 通讯作者: B. Iñíguez

Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model

使用二维解析模型研究肖特基势垒双栅极 MOSFET 的性能

• DOI: 10.1109/ted.2012.2235146
• 发表时间: 2013
• 期刊: IEEE Transactions on Electron Devices
• 影响因子: 3.1
• 作者: M. Schwarz;T. Holtij;A. Kloes;B. Iniguez
• 通讯作者: B. Iniguez