Design and Growth of Si-based Spintronic Materials
Design and Growth of Si-based Spintronic Materials
批准号:
0725902
负责人:
Ching Yao Fong
金额:
$30.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-08-01 至 2012-07-31
中文摘要
本研究的目的是设计和生长新型的硅基自旋电子材料,即Mn掺杂的数字铁磁和三层异质结构,以及Mn/Si超晶格。这些材料有望表现出高自旋极化、高居里温度和大磁阻。这些方法包括设计最佳结构配置和研究缺陷和不完善的影响的第一性原理计算;使用混合磁控溅射/电子束蒸发和分子束外延技术的合成;和结构和磁性characteristics.Intellectual优点:该项目有几个智力优点:设计和实现了一类新的Si基自旋电子材料;深入理解所提出的材料系统中的磁相互作用和铁磁性的起源;通过共掺杂空穴来调谐Si基量子结构中过渡金属原子之间的磁耦合的处方;更广泛的影响:该项目将对技术进步、教育和培训产生广泛的影响。所提出的材料为制造自旋电子器件提供了一种新的范例,例如传感器,开关,存储器和其他集成芯片,其性能上级当前的金属基器件。与成熟的硅技术相结合,将大大加快这类器件的开发和应用。技术进步将产生深远的社会和经济影响。学生将通过理论和实验相结合的努力,接触到自旋电子材料的电子和磁性的广泛知识。培训将有助于将他们塑造成未来的学术和工业领袖,并保持美国在自旋电子学领域的领导地位。
英文摘要
The objective of this research is to design and grow new Si-based spintronic materials,namely Mn doped digital ferromagnetic and trilayer heterostructures, and Mn/Si superlattices. These materials are expected to exhibit high spin polarization, high Curie temperature, and large magnetoresistance. The approaches include first principles calculations to design optimum structural configurations and investigate effects of defects and imperfections; synthesis using hybrid magnetron sputtering/e-beam evaporation and molecular beam epitaxy techniques; and structural and magnetic characterizations.Intellectual Merits:This project has several intellectual merits: design and realization of a new class of Sibased spintronic materials; an in-depth understanding of the magnetic interactions and origins of ferromagnetism in the proposed material systems; prescriptions for tuning magnetic coupling between the transition metal atoms in Si-based quantum structures by co-doping holes; and calculations and measurements of magneto-transport properties in proposed heterostructures.Broader Impact:This project will have broad impacts on technological advancements, and on educationand training. The proposed materials provide a new paradigm for fabricating spintronic devices such as sensors, switches, memory and other integrated chips with superior performance than the current metal-based devices. Integration with the mature Si-technology, the backbone of high-tech industries, will greatly speed up the development and employment of such devices. The technological advancements will have profound social and economical impacts. Students will be exposed to extensive knowledge of electronic and magnetic properties of spintronic materials through combined theoretical and experimental efforts. The training will help to shape them into future academic and industrial leaders and sustain the U.S. leadership in spintronics.
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Trilayer and Superlattice Half Metal Thin Films
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批准号:1232275
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项目类别:Continuing Grant
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资助金额:$40.0万
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财政年份:2012
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负责人:Ching Yao Fong
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依托单位:
SPIN ELECTRONICS: Spintronics with Novel Half-Metals: Computational Design
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批准号:0225007
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项目类别:Continuing Grant
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资助金额:$24.0万
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财政年份:2002
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负责人:Ching Yao Fong
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依托单位:
US-Turkey Cooperative Research: Search for Microscopic Theory for the State-of-the-Art Epitaxial Growth of Semiconductors
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批准号:9872053
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项目类别:Standard Grant
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资助金额:$3.28万
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财政年份:1998
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负责人:Ching Yao Fong
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依托单位:
国内基金
海外基金
基于FP-Growth关联分析算法的重症患者抗菌药物精准决策模型的构建和实证研究
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批准号:2024Y9049
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项目类别:省市级项目
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资助金额:100.0万元
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批准年份:2024
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负责人:阮君山
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依托单位:
Research on the Rapid Growth Mechanism of KDP Crystal
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批准号:10774081
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项目类别:面上项目
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资助金额:45.0万元
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批准年份:2007
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负责人:滕冰
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依托单位: