CAREER: Understanding, Development and Applications of Nanoscale Memristor Devices

职业：纳米级忆阻器器件的理解、开发和应用

• 批准号: 0954621
• 负责人: Wei Lu
• 金额: $ 40万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-03-01 至 2015-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0954621&HistoricalAwards=false
• 关键词: CAREER; Understanding; Development; Applications; Nanoscale

The objective of this research is to develop unconventional, high-performance memory and logic systems based on nanoscale two-terminal resistive switches (memristors). The approach is to carry out a systematic material and device study that includes understanding the device operation from atomic-scale imaging and transport measurements; designing a new device structure to improve device reliability and performance; demonstrating memristor/CMOS integration; and discovering new device and circuit functionality. Intellectual Merit: Memristor is a concise term for two-terminal resistance switching devices with inherent memory. Recently proposed memristor/CMOS hybrid circuits can provide unmatched density and connectivity and offer a promising approach for electronics beyond transistor scaling. This research addresses critical fundamental and practical questions related to memristor research. It will enable the development of key nanoelectronic systems such as non-volatile universal memories with tera-bit density and sub 10 ns access time, and reconfigurable logic systems with function density two-orders of magnitude higher than conventional circuits. Knowledge and techniques developed here will further stimulate studies on new computing paradigms.Broader Impacts: Besides having an immediate impact on semiconductor research, this program aims to convey the excitement of nanotechnology to students and the public through a number of educational and outreach activities. Students from underrepresented groups will be recruited to work directly on the project. Research results will be incorporated into a new undergraduate course and disseminated to the general public through publications, technology transfer, websites and a textbook. High-school students in inner-city, high-need school districts will be engaged through a teaching module development, class visits and online exhibits.

本研究的目的是开发非传统的，高性能的存储器和逻辑系统的基础上纳米级的两端电阻开关（忆阻器）。该方法是进行系统的材料和器件研究，包括从原子尺度成像和传输测量中了解器件的操作;设计新的器件结构以提高器件的可靠性和性能;演示忆阻器/CMOS集成;以及发现新的器件和电路功能。智力优势：忆阻器是一个简洁的术语，用于具有固有记忆的两端电阻开关器件。最近提出的忆阻器/CMOS混合电路可以提供无与伦比的密度和连接性，并为超越晶体管缩放的电子器件提供有前途的方法。这项研究解决了与忆阻器研究相关的关键基础和实际问题。它将使关键的纳米电子系统的发展，如非易失性通用存储器与兆位密度和10纳秒以下的访问时间，和可重构逻辑系统的功能密度比传统电路高两个数量级。更广泛的影响：除了对半导体研究产生直接影响外，该计划旨在通过一些教育和推广活动向学生和公众传达纳米技术的兴奋。来自代表性不足群体的学生将被招募直接参与该项目。研究成果将纳入新的本科课程，并通过出版物、技术转让、网站和教科书向公众传播。市中心高需求学区的高中学生将通过教学模块开发、课堂参观和在线展览参与进来。