Design and growth of high entropy oxides with tailored ionic dynamics for memory and computing applications

为内存和计算应用设计和生长具有定制离子动力学的高熵氧化物

• 批准号: 1810119
• 负责人: Wei Lu
• 金额: $ 42.5万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-07-15 至 2022-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1810119&HistoricalAwards=false
• 关键词: Design; growth; entropy; oxides; tailored

Nontechnical Description: New materials that offer tailored electronic as well as ionic characteristics can fundamentally impact how electronic devices and circuits are designed and built. This project brings together both experimentalists and theorists to explore a new class of oxide material that offers well-controlled coupled electronic/ionic effects for the development of new memory and logic devices. Through fundamental theory analysis and experimental innovations, materials that do not exist naturally can be systematically designed, synthesized and utilized. The techniques developed in this project offer new toolboxes for fundamental materials design and research, and enable new device applications. This project provides comprehensive educational and training opportunities for graduate students and undergraduates. The team plans to incorporate knowledge and techniques developed during research into core technical courses in materials science and electrical engineering disciplines, and disseminate research results to the general public through publications, summer camps, class visits and online exhibits. Technical Description: Previous studies on resistive switching memory devices are limited by oxide materials that are currently available. In this project, the team proposes to significantly broaden the parameter space of candidate materials that can lead to new material compositions and optimized device performance, by taking advantage of the concept that entropy can be used to stabilize new oxide phases. The multidiscipline team offers complementary expertise in theory, materials science, film growth and device engineering and aims to perform systematic study on high-entropy oxides and their applications in emerging electronic devices. The theoretical studies, including design of the high-entropy oxides with desired composition and stoichiometry, prediction of the kinetic (ionic hopping energy barrier and hopping distance) and thermodynamic (oxygen vacancy charge state) parameters, and transport and device-level modeling, provides guidance for the tightly integrated experimental studies including systematic materials synthesis, characterizations and device demonstrations and measurements to extract the relevant material parameters and verify the device performance. The synergistic co-development of these tasks not only enhances the likelihood of success of the proposed project, but also builds the foundation for other tasks where new, engineered materials can be developed.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：提供定制电子和离子特性的新材料可以从根本上影响电子设备和电路的设计和制造方式。该项目将实验学家和理论家聚集在一起，探索一类新的氧化物材料，为开发新的存储和逻辑器件提供良好控制的耦合电子/离子效应。通过基础理论分析和实验创新，可以系统地设计、合成和利用自然界不存在的材料。该项目开发的技术为基础材料的设计和研究提供了新的工具箱，并使新的设备应用成为可能。该项目为研究生和本科生提供了全面的教育和培训机会。该团队计划将研究过程中开发的知识和技术纳入材料科学和电气工程学科的核心技术课程，并通过出版物、夏令营、课堂参观和在线展览向公众传播研究成果。技术描述：先前对电阻开关存储器件的研究受到目前可用的氧化物材料的限制。在这个项目中，该团队建议通过利用熵可以用来稳定新氧化物相的概念，显着拓宽候选材料的参数空间，从而产生新的材料成分和优化的器件性能。该多学科团队在理论、材料科学、薄膜生长和器件工程方面提供互补的专业知识，旨在对高熵氧化物及其在新兴电子器件中的应用进行系统研究。理论研究包括设计具有理想组成和化学计量的高熵氧化物，预测动力学（离子跃迁能垒和跃迁距离）和热力学（氧空位电荷态）参数，以及传输和器件级建模，为紧密集成的实验研究提供指导，包括系统材料合成；表征和设备演示和测量，以提取相关材料参数并验证设备性能。这些任务的协同发展不仅提高了拟议项目成功的可能性，而且还为开发新的工程材料的其他任务奠定了基础。该奖项反映了美国国家科学基金会的法定使命，并通过使用基金会的知识价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Nanoionic Resistive‐Switching Devices

• DOI: 10.1002/aelm.201900184
• 发表时间: 2019-05
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: Xiaojian Zhu;Seung Hwan Lee;W. Lu

Thermal conductivity of rutile germanium dioxide

• DOI: 10.1063/5.0011358
• 发表时间: 2020-09
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: S. Chae;K. Mengle;R. Lu;A. Olvera;N. Sanders;J. Lee;P. Poudeu;J. Heron;E. Kioupakis

Effects of local compositional and structural disorder on vacancy formation in entropy-stabilized oxides from first-principles

根据第一原理，局部成分和结构无序对熵稳定氧化物中空位形成的影响

• DOI: 10.1038/s41524-022-00780-0
• 发表时间: 2022
• 期刊: npj Computational Materials
• 影响因子: 9.7
• 作者: Chae, Sieun;Williams, Logan;Lee, Jihang;Heron, John T.;Kioupakis, Emmanouil
• 通讯作者: Kioupakis, Emmanouil

Tuning Resistive Switching Behavior by Controlling Internal Ionic Dynamics for Biorealistic Implementation of Synaptic Plasticity

• DOI: 10.1002/aelm.202101025
• 发表时间: 2022-02
• 期刊: Advanced Electronic Materials
• 影响因子: 6.2
• 作者: Sangmin Yoo;Yuting Wu;Yongmo Park;Wei D. Lu

Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM

• DOI: 10.1021/acsami.8b18386
• 发表时间: 2019-03-27
• 期刊: ACS APPLIED MATERIALS & INTERFACES
• 影响因子: 9.5
• 作者: Lee, Jihang;Schell, William;Lu, Wei D.
• 通讯作者: Lu, Wei D.