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Graphene-SiC Interface: Effect of Atomic Bonding Type on Thermal Transport

Graphene-SiC Interface: Effect of Atomic Bonding Type on Thermal Transport
石墨烯-SiC 界面:原子键合类型对热传输的影响
批准号:
1235852
负责人:
Xinwei Wang
金额:
$25.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-09-01 至 2017-08-31

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中文摘要
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英文摘要
CBET - 1235852 PI: Xinwei Wang, Iowa State UniversityIn this project, a novel technology based on steady-state joule heating and simultaneous Raman spectroscopy will be developed to measure and distinguish the temperature between graphene and its substrate. This technology enables nanometer resolution in the out-of-plane direction for thermal mapping. Systematic knowledge will be built about thermal transport between graphene and SiC, and how this interface thermal resistance is affected by two typical interfaces: interface featuring Van der Waal force and interface with covalent bond. Atomistic modeling will be conducted to evaluate the graphene-interface thermal resistance and complement the experimental data to provide a cross-benchmarked and complemented in-depth and full-spectrum picture of the thermal transport at graphene-SiC interface. For thermal design in graphene-based devices and systems, this project will establish an important quantitative knowledge base about the interface thermal resistance sustained by Van der Waals and covalent bonds. Broader impacts. The results of the research will be integrated into existing and new courses at Iowa State University. Undergraduate participation in summer research will be facilitated through the PERUSE program at ISU. Outreach to K-12 students is included, and will involve supervision of independent study projects by top students from local high schools.
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