Atomic layer deposition of dopant source layers for semiconductor doping - Characterization and modelling of drive-in processes

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Atomic layer deposition processes for phosphorus-containing layers will be developed and investigated. Recently developed ALD processes for boron oxide and antimony oxide will be further improved and analyzed as well. These layers will be used as a dopant sources for silicon doping to produce ultra-shallow and homogeneous doped pn junctions, especially for applications, where doping on three-dimensional surface configurations is required. In addition, suitable methods for stabilization of unstable dopant layers need to be found and analyzed. The deposited layers will be characterized and the diffusion processes in the silicon and in the oxide phase will be studied, and thus the doping processes will be modeled.