权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Fundamental Study of Ultra-High Speed Electron Devices with Metal-Insulator Single-Crystalline Ultra-Thin Layrs

金属-绝缘体单晶超薄层超高速电子器件的基础研究

基本信息

批准号：
03452179
负责人：
ASADA Masahiro
金额：
$ 4.16万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452179/
关键词：
Ultra-High Speed Electron Devices Metal-Insulator Heterostructure Epitaxial Growth Metalic Silicide Insulator Fluoride Resonant Tunneling Diode Resonant Tunneling Transistor Hot Electron Transistor 金属・絶縁体極薄膜ヘテロ構造弗化カルシウムコバルトシリサイド Si

项目摘要

This research project is a fundamental study towards realizing ultra-high speed electron devices with metal and insulator. To achieve this, we investigated theoretically and experimentally on physics of superlattices with nanometer-thick metal and insulator, and also on basic properties of electron devices for high-speed operation fabricated with this material system. Results obtained in this project are summarized as follows.A novel quantum-effect high-speed electron device was proposed assuming metal-insulator superlattice as the material system. To realize this device, we established crystal growth technique of metal-insulator ultra-thin heterostructure using cobalt silicide and calthium fluoride at first. Using this technique, metal-insulator resonant tunneling diode and hot electron transistor, both of which are basic components of the proposed device, were fabricated and their principle operation was achieved for the first time. The structural dependence of the resonant levels of … More the metal-insulator quantum well, the study of which is essential for the realization of the proposed device, was clarified. A resonant tunneling transistor was also fabricated and its transistor action was achieved.The structural dependence of the resonant levels of the metal-insulator quantum well was investigated by comparing theoretical and experimental results of the negative differential resistance observed in the triple-barrier resonant tunneling diode. With respect to the well width dependenceof the applied voltage at negative differential resistance and the number of the resonance points, a theory with the free-electron mass agreed well with the observation. From this result, design of the resonant levels for the proposed device became possible. For the resonant tunneling transistor, the first transistor action with negative differential resistance was achieved at 77K in the metal-insulator system by the establishment of the fabrication process including mainly the contact of the base electrode to the ultra-thin metal layr betweenthe insulator layrs.These basic results of theory and experiment are an important step towards realizing quantum-effect ultra-high speed electron devices with metal and insulator. Less

本研究计画为实现金属绝缘体超高速电子元件之基础性研究。为了实现这一目标，我们从理论和实验上研究了具有纳米厚金属和绝缘体的超晶格的物理特性，以及用这种材料系统制造的高速操作电子器件的基本特性。本项目取得的成果概括如下：以金属-绝缘体超晶格为材料体系，提出了一种新型量子效应高速电子器件。为了实现这种器件，我们首先建立了硅化钴和氟化钙的金属-绝缘体超薄异质结晶体生长技术。使用这种技术，金属-绝缘体共振隧穿二极管和热电子晶体管，这两者都是所提出的设备的基本组成部分，制造和第一次实现其原理操作。的共振能级的结构依赖性 ...更多信息阐明了金属-绝缘体量子阱，对该量子阱的研究对于实现所提出的器件至关重要。通过比较三势垒共振隧穿二极管中的负微分电阻的理论和实验结果，研究了金属-绝缘体量子阱的共振能级与结构的关系。对于负微分电阻下外加电压与阱宽的关系以及谐振点的数目，用自由电子质量的理论与观测结果吻合得很好。从这个结果，所提出的设备的谐振水平的设计成为可能。对于共振隧穿晶体管，在77 K下，通过建立以基极与绝缘层间超薄金属层接触为主要内容的制备工艺，首次在金属-绝缘体系统中实现了具有负微分电阻的晶体管动作，这些基本的理论和实验结果是实现量子效应超低温的重要一步。用金属和绝缘体制成的高速电子器件。少