Fundamental Study of Ultra-High Speed Electron Devices with Metal-Insulator Single-Crystalline Ultra-Thin Layrs

金属-绝缘体单晶超薄层超高速电子器件的基础研究

基本信息

批准号：
03452179
负责人：
ASADA Masahiro
金额：
$ 4.16万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1993
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452179/
关键词：
Ultra-High Speed Electron Devices Metal-Insulator Heterostructure Epitaxial Growth Metalic Silicide Insulator Fluoride Resonant Tunneling Diode Resonant Tunneling Transistor Hot Electron Transistor 金属・絶縁体極薄膜ヘテロ構造弗化カルシウムコバルトシリサイド Si

项目摘要

This research project is a fundamental study towards realizing ultra-high speed electron devices with metal and insulator. To achieve this, we investigated theoretically and experimentally on physics of superlattices with nanometer-thick metal and insulator, and also on basic properties of electron devices for high-speed operation fabricated with this material system. Results obtained in this project are summarized as follows.A novel quantum-effect high-speed electron device was proposed assuming metal-insulator superlattice as the material system. To realize this device, we established crystal growth technique of metal-insulator ultra-thin heterostructure using cobalt silicide and calthium fluoride at first. Using this technique, metal-insulator resonant tunneling diode and hot electron transistor, both of which are basic components of the proposed device, were fabricated and their principle operation was achieved for the first time. The structural dependence of the resonant levels of … More the metal-insulator quantum well, the study of which is essential for the realization of the proposed device, was clarified. A resonant tunneling transistor was also fabricated and its transistor action was achieved.The structural dependence of the resonant levels of the metal-insulator quantum well was investigated by comparing theoretical and experimental results of the negative differential resistance observed in the triple-barrier resonant tunneling diode. With respect to the well width dependenceof the applied voltage at negative differential resistance and the number of the resonance points, a theory with the free-electron mass agreed well with the observation. From this result, design of the resonant levels for the proposed device became possible. For the resonant tunneling transistor, the first transistor action with negative differential resistance was achieved at 77K in the metal-insulator system by the establishment of the fabrication process including mainly the contact of the base electrode to the ultra-thin metal layr betweenthe insulator layrs.These basic results of theory and experiment are an important step towards realizing quantum-effect ultra-high speed electron devices with metal and insulator. Less

该研究项目是一项基本研究，旨在通过金属和绝缘体实现超高的速度电子设备。为了实现这一目标，我们对具有纳米厚金属和绝缘体的超级晶格的物理学进行了研究，并研究了该材料系统制造的高速操作的电子设备的基本特性。该项目中获得的结果总结如下。一种新型的量子效应的高速电子设备实现了该设备，我们首先在使用钴硅硅和氟化核核苷酸的金属绝缘剂超薄异质结构中建立了晶体生长技术。使用此技术，制造了金属 - 绝缘子谐振二极管二极管和热电子晶体管，它们都是所提出的设备的基本组件，并首次实现了其原理操作。阐明了…更多的金属量量子量子的谐振水平的结构依赖性，其研究对于实现所提出的设备至关重要。还制造了一个共振的隧穿晶体管，并实现了其变压器的作用。通过比较在三伴随三重棒谐振隧道二极管中观察到的负差分电阻的理论和实验结果，研究了金属 - 绝缘子量子孔的共振水平的结构依赖性。关于在负差分电阻和共振点的数量上，施加电压的井宽依赖性相对于自由电子质量的理论与观测值一致。从此结果，提出的设备的谐振水平的设计变得可能是可能的。对于谐振隧道晶体管，通过建立制造过程，在金属绝缘体系统中，在77K处实现了第一个具有负差分电阻的晶体管作用，包括主要是基本电气与绝缘体Layr之间的超薄金属Layr的接触。理论和实验的这些基本结果是用金属和绝缘体实现量子效应的超高速度电子设备的重要步骤。较少的