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A Fundamental Study of Triode Amplifier Devices in the Optical Range

光范围内三极管放大器器件的基础研究

基本信息

批准号：
13450137
负责人：
ASADA Masahiro
金额：
$ 10.05万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13450137/
关键词：
Triode in optical range nanostructures photon-assisted tunneling beat of electron waves coherent superradiance CaF_2 CdF_2 Si heterostructures resonant tunneling diode

项目摘要

This project aimed at realization of a triode amplifier device in the optical frequency range which we proposed recently. The device operates with the combination of the photon-assisted tunneling of electrons at the input and their emission of electromagnetic wave at the output port due to the beat of electron waves. The nanostructure crystal growth, fabrication process, and detailed theoretical analysis of the device operation were performed as a fundamental research toward the realization of the device. The results are summarized as follows.For the theoretical analysis of the device operation, a full quantum mechanical treatment was done for the first time, noting that the emission of electromagnetic wave at the output is originated from the collective superradiance from the photon-assisted tunneling electrons. By this analysis, it became possible to discuss the influence of electron scattering, frequency limit, siginal-to-noise ratio. It was shown that, although the electron scatter … More ing reduces the gain, its influence is not significant if the photon energy is smaller than the electron energy broadening due to the scattering, and a possibility of amplification up to far or mid infrared region was estimated.For the fabrication of the device, crystal growth of CaF2/CdF2/Si heterostructure was investigated as the first step, because energy quantization is expected to be remarkable in this material system due to large potential barriers. We proposed the nano-area epitaxy, in which the crystal growth is restricted into 100nm-order small region. By this technique, the resonant tunneling structure with very uniform characteristics was obtained, and systematic experiments for the structure dependence were performed for the first time. Crystal growth on Si(100) substrate was also studied using hydrogen-terminated substrates and inclined substrates in which the atomic steps on the surface is controlled, and the negative differential resistance was obtained at room temperature for the first time on Si(100) substrate for this material system. The device structure using two-dimensional electron gas at the heterointerface and slot lines at the input and output ports was proposed for relatively easy fabrication.By these results, theoretical bases, crystal growth, and device structures were established. Less

本计画的目的是实现我们最近提出的光频范围内的前置放大器。该器件在输入端的电子的光子辅助隧穿和由于电子波的拍频而在输出端的电磁波发射的组合下工作。纳米结构晶体的生长，制造工艺，和详细的理论分析的器件操作进行了实现的器件作为一个基础性的研究。主要结果如下：对于器件工作的理论分析，首次进行了完整的量子力学处理，指出输出端的电磁波发射源于光子辅助隧穿电子的集体超辐射。通过这种分析，讨论了电子散射、频率极限、信噪比等因素的影响。结果表明，尽管电子散射， ...更多信息如果光子能量小于由于散射引起的电子能量展宽，则其影响不显著，并且估计放大到远红外或中红外区域的可能性。对于器件的制造，CaF 2/CdF 2/Si异质结构的晶体生长作为第一步进行了研究，因为由于大的势垒，在该材料系统中预期能量量子化是显著的。我们提出了纳米区域外延，将晶体生长限制在100 nm量级的小区域内。利用这种技术，获得了具有非常均匀特性的共振隧穿结构，并首次对结构依赖性进行了系统的实验研究。在Si（100）基片上，采用氢终止基片和倾斜基片控制表面原子台阶生长晶体，并首次在室温下在Si（100）基片上获得了该材料体系的负微分电阻。提出了在异质结界面处使用二维电子气，在输入和输出端口处使用槽线的器件结构，为器件的制备提供了理论基础，为晶体生长和器件结构的设计奠定了基础。少