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Research of Ultra-High-Speed Optical Devices Using Multi Dimensional Quantum-Well Structure

多维量子阱结构超高速光器件研究

基本信息

批准号：
63850059
负责人：
ASADA Masahiro
金额：
$ 17.79万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B).
财政年份：
1988
资助国家：
日本
起止时间：
1988 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-63850059/
关键词：
Multidimensional quantum-well laser Ultra-high-speed optical device GaInAs InP Quantum wire Quantum box Epitaxial Growth Low-damage dry etching GaInAs 多次元量子井戸構造屈折率反射型光スイッチ

项目摘要

Multidimensional quantum-well structures, such as quantum wire and quantum box, are expected to operate with high speed due to their material properties different from conventional bulk crystals. The main purpose of this research is the development of fabrication technique of multidimensional quantum well structures and the application of these structures to devices for ultra-high capacity optical communication. Results obtained are summarized as follows.Optimal device structures were found theoretically for laser and optical switch/modulator with multidimensional quantum well structures by analyzing the structure dependence of the laser threshold and the insertion loss of optical switch/modulator precisely.Lasing action was obtained for the first time at 77K with pulsed current injection in GaInAs/GaInAsP/InP quantum-wire laser with 10nm-thick 30nm-wide wires fabricated by newly developed nanometer fabrication technology viz. Electron beam lithography for pattern writing, wet chemical etching and OMVPE regrowth for embedding process.GaInAs/GaInAsP/InP multi-quantum-film lasers with wire-like active region, Which were fabricated by two step OMVPE growth and wet chemical etching, operated at room temperature for the first time, An increase in the threshold current density in such lasers was drastically reduced by using a preheating process in hydrogen atmosphere and a thin InP covering layer growth prior to the regrowth of a GaInAsP optical confinement layer.A GaInAsP/InP quantum wire structure was fabricated by using a high vacuum electron-cyclotron-resonance reactive-ion-beam-etching system with very low acceleration voltage. Large refractive index variation (-4%) and low optical absorption under electric field application was observed in this structuure. This result indicates that multidimensional quantum well structures are suitable for high performance optical switches/modulators.

量子线和量子盒等多维量子阱结构由于其不同于传统体晶体的材料特性，有望实现高速运转。本研究的主要目的是发展多维量子阱结构的制备技术，并将其应用于超高容量光通信器件。获得的结果总结如下：通过精确分析激光阈值和光开关/调制器插入损耗与结构的关系，从理论上找到了多维量子阱结构激光器和光开关/调制器的最佳器件结构。在厚度为10 nm的30 nm-GaInAs/GaInAsP/InP量子线激光器中，通过脉冲电流注入，首次获得了77 K的激光作用。采用新的纳米加工技术，即电子束光刻图形写入、湿法化学腐蚀和OMVPE再生长嵌入工艺，制备了宽的金属线，采用两步OMVPE生长和湿法化学腐蚀工艺，首次制备出具有线状有源区的GaInAs/GaInAsP/InP多量子薄膜激光器，采用氢气氛预热和在GaInAsP光限制层再生长前先生长InP覆盖层的方法，大大降低了这种激光器阈值电流密度的增加。电子束蚀刻系统具有非常低的加速电压。该结构在电场作用下具有较大的折射率变化（~ 4%）和较低的光吸收。这一结果表明，多维量子阱结构适用于高性能的光开关/调制器。