Fundamental Research for Three-Terminal Amplifier Device in the Terahertz Range Using Photon-Assisted Tunneling

利用光子辅助隧道效应的太赫兹三端放大器装置的基础研究

• 批准号: 09450139
• 负责人: ASADA Masahiro
• 金额: $ 7.87万
• 依托单位: TOKYO INSTITUTE OF TECHNOLOGY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1998
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09450139/
• 关键词: Terahertz Device; Metal; Insulator Super lattice; Cobalt silicide; Calcium Fluoride; Ionized-Beam Epitaxy; Resonant Tunneling Structure; Photon-Assisted Tunneling; Planar Patch Antenna; テラヘルツ検波; テラヘルツ用平面パッチアンテナ; 電子波ビート; 絶緑体多層構造; GalnAs; lnAl

This project was performed aiming at realization of a new three-terminal device which we proposed for an amplifier in the terahertz range. The device is based on a combination of photon-assisted tunneling and beating of electron waves in metal/insulator multilayer structures. As a fundamental research on this device, (i)establishment of the fabrication process for a small planar antenna with a ultrafine resonant tunneling structure as the input part of the device, and (ii)observation of the photon-assisted tunneling were done.Ultrafine resonant tunneling diodes with metal (CoSi_2) and insulator (CaF_2) were fabricated using our original ionized-beam epitaxy and electron-beam lithography. The characteristics with negative differential resistance were obtained at room temperature with the peak-to-valley ratio of 2.8. An integration of this diode with a high-directivity planar patch antenna was proposed. Properties of this antenna was measured using a SiO_2 single-barrier diode for the te … More rahertz detection, and it was shown that the antenna can provide the device with induced voltage enough for the observation of photon-assisted tunneling.The photon-assisted tunneling was observed in the terahertz detection properties of ultrafine GaInAs/InAlAs triple-barrier resonant tunneling diodes integrated with planar patch antennas. It was also found from the frequency dependence that the terahertz detection of the diodes is in an intermediate situation between the classical square-law detection and the pure photon-assisted tunneling. From this result, it could be recognized that the proposed device is a new type including in its operation both the electron transit as a transistor and the electron transition as a laser. The amplitude of the propagating charge wave generated from the beating of tunneling electron wave, which is the other principle of the device, was also estimated to be large enough for amplification. Consequently, it was concluded that the realization of the proposed device will be possible by an optimized design of the input/output structures. Less

该项目的目的是实现一个新的三端设备，我们提出了在太赫兹范围内的放大器。该器件基于金属/绝缘体多层结构中的光子辅助隧穿和电子波的跳动的组合。作为该器件的基础性研究，（i）建立了一种以超细共振隧穿结构作为输入部分的小型平面天线的制作工艺，（ii）观察了光子辅助隧穿效应，并利用我们独创的离子束外延和电子束光刻技术制作了金属（CoSi_2）和绝缘体（CaF_2）的超细共振隧穿二极管。在室温下获得了具有负微分电阻的特性，峰谷比为2.8。提出了一种将该二极管与高方向性平面贴片天线集成的方法。用SiO_2单势垒二极管测量了天线的特性 ...更多信息 实验结果表明，该天线可以为器件提供足够的感应电压，从而观察到光子辅助隧穿效应.在与平面贴片天线集成的超细GaInAs/InAlAs三势垒共振隧穿二极管的太赫兹探测特性中，观察到了光子辅助隧穿效应.从频率依赖关系中还发现，二极管的太赫兹探测处于经典平方律探测和纯光子辅助隧穿之间的中间状态。从这个结果可以看出，所提出的器件是一种新型器件，在其工作中既包括作为晶体管的电子跃迁，又包括作为激光器的电子跃迁。由隧穿电子波的拍频产生的传播电荷波的振幅（这是该器件的另一原理）也被估计为足够大以用于放大。因此，可以得出结论，所提出的设备的实现将是可能的输入/输出结构的优化设计。少

项目成果

M.Watanabe, W.Saitoh, Y.Aoki, J.Nishiyama: ""Epitaxial growth of nanometer-thick CaF_2/CdF_2 heterostructures using partially ionized beam epitaxy"" Solid State Electron.vol.42. 1627-1630 (1998)

M.Watanabe、W.Saitoh、Y.Aoki、J.Nishiyama：“使用部分电离束外延生长纳米厚的 CaF_2/CdF_2 异质结构””Solid State Electron.vol.42。

W.Saitoh, 他: "Reduction of Electrical Resistance of Nanometer-Thick CoSi2 Film on CaF2 by Pseudomorphic Growth of CaF2 on Si(111)" Japan.J.Appl.Phys.36. 4470-4471 (1997)

W.Saitoh 等人：“通过在 Si(111) 上假晶生长 CaF2 来降低 CaF2 上的纳米厚 CoSi2 薄膜的电阻”Japan.J.Appl.Phys.36 (1997)。

M.Watanabe, T.Maruyama, S.Ikeda: ""Light emission from Si nanocrystals embedded in CaF_2 epilayers on Si(111) : effect of rapid thermal annealing, "" J.Luminescence. (to be published).

M.Watanabe、T.Maruyama、S.Ikeda：“嵌入 Si(111) 上 CaF_2 外延层中的 Si 纳米晶体的光发射：快速热退火的效应，”J.Luminescent。

W.Saitoh, K.Yamazaki, M.Tsutsui, A.Itoh, and M.Asada: ""Fabrication and Characteristics of a Field Effect Transistor Using CdF_2/CaF_2 Heterostructures on a Si Substrate"" Japan.J.Appl.Phys.vol.37. L1138-L1140 (1998)

W.Saitoh、K.Yamazaki、M.Tsutsui、A.Itoh 和 M.Asada：“在 Si 衬底上使用 CdF_2/CaF_2 异质结构的场效应晶体管的制造和特性”Japan.J.Appl.Phys。

M.Watanabe, T.Matsunuma, T.Maruyama, Y.Maeda: ""Electroluminescence of Nanocrystal Si Embedded in Single-Crystal CaF_2/Si(111)"" Jpn.J.Appl.Phys.vol.37. L591-L593 (1998)

M.Watanabe、T.Matsunuma、T.Maruyama、Y.Maeda：“单晶 CaF_2/Si(111) 中嵌入纳米晶硅的电致发光”Jpn.J.Appl.Phys.vol.37。