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Beating Effect of Traveling Electron Waves bv Terahertz Electromagnetic Wave and Its Application to Ultra-High Speed Three-Terminal Devices

太赫兹电磁波行波电子波的拍频效应及其在超高速三端器件中的应用

基本信息

批准号：
11450136
负责人：
ASADA Masahiro
金额：
$ 9.15万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

项目摘要

In this project, aiming at the realization of a novel electron device we proposed for a possibility of ultra-high frequency amplifier utilizing the photon-assisted transition and beating of electron waves, we have done (i) establishment of the epitaxial growth of insulator/semiconductor heterostructures and thier application to resonant tunneling structure which is a part of the proposed device, and (ii) detailed observation of the photon-assisted tunneling which is one of the principles of the proposed device.For the epitaxial growth, we chose CaF_2/Si and CaF_2/CdF_2 heterostructures with large band offsets, and established the growth condition of resonant tunneling structure with the ionization beam epitaxial technique. The quality of the epitaxial layers was then optimized and greatly improved by a selective growth method in which the epitaxial layers were formed in windows with a few hundred-nanometer size made on Si substrates with SiO_2 masks. Resonant tunneling diodes with hish … More reproducibility and large peak-to-valley ratio, at least 10, in the negative differential resistance were obtained at room temperature.For the observation of the photon-assisted tunneling effect, we fabricated small area GaInAs/InAlAs triple-barrier resonant tunneling diodes integrated with patch antennas, and irradiated terahertz electromagnetic wave onto them. The antenna loss was considerably reduced by an optimized structure, and thus, clear photon-assisted tunneling with large incident power was achieved. The observed results were well explained by the photon-assisted tunneling with multi-photon process of stimulated emission and absorption The terahertz optical gain was deduced from the observed stimulated emission rate. Using these results, we performed theoretical analysis of amplification characteristics of the proposed three-terminal device, and showed that power amplification up to several terahertz is possible. Necessary structures for these characteristics were also designed. Less

在本项目中，为了实现我们提出的一种利用光子辅助跃迁和电子波加热的超高频放大器的可能性的新型电子器件，我们完成了(i)建立绝缘体/半导体异质结构的外延生长及其在谐振隧道结构中的应用，这是所提出器件的一部分；（ii）光子辅助隧穿的详细观察，这是该装置的原理之一。在外延生长方面，我们选择了具有较大波段偏移的CaF_2/Si和CaF_2/CdF_2异质结构，并利用离子束外延技术建立了谐振隧道结构的生长条件。采用选择性生长的方法，将外延层生长在几百纳米尺寸的硅衬底上，用SiO_2掩膜在窗口中形成，从而优化了外延层的质量，大大提高了外延层的质量。在室温条件下，获得了高再现性、高峰谷比（负差分电阻至少为10）的谐振隧道二极管。为了观察光子辅助隧道效应，我们制作了集成贴片天线的小面积GaInAs/InAlAs三势垒共振隧道二极管，并对其进行太赫兹电磁波照射。优化后的结构大大降低了天线损耗，从而实现了大入射功率下清晰的光子辅助隧穿。用光子辅助隧道的多光子受激发射和吸收过程很好地解释了观测结果，并从观测到的受激发射率推导出太赫兹光学增益。利用这些结果，我们对所提出的三端器件的放大特性进行了理论分析，并表明功率放大高达几太赫兹是可能的。还设计了满足这些特性的必要结构。少