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Beating Effect of Traveling Electron Waves bv Terahertz Electromagnetic Wave and Its Application to Ultra-High Speed Three-Terminal Devices

太赫兹电磁波行波电子波的拍频效应及其在超高速三端器件中的应用

基本信息

批准号：
11450136
负责人：
ASADA Masahiro
金额：
$ 9.15万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

项目摘要

In this project, aiming at the realization of a novel electron device we proposed for a possibility of ultra-high frequency amplifier utilizing the photon-assisted transition and beating of electron waves, we have done (i) establishment of the epitaxial growth of insulator/semiconductor heterostructures and thier application to resonant tunneling structure which is a part of the proposed device, and (ii) detailed observation of the photon-assisted tunneling which is one of the principles of the proposed device.For the epitaxial growth, we chose CaF_2/Si and CaF_2/CdF_2 heterostructures with large band offsets, and established the growth condition of resonant tunneling structure with the ionization beam epitaxial technique. The quality of the epitaxial layers was then optimized and greatly improved by a selective growth method in which the epitaxial layers were formed in windows with a few hundred-nanometer size made on Si substrates with SiO_2 masks. Resonant tunneling diodes with hish … More reproducibility and large peak-to-valley ratio, at least 10, in the negative differential resistance were obtained at room temperature.For the observation of the photon-assisted tunneling effect, we fabricated small area GaInAs/InAlAs triple-barrier resonant tunneling diodes integrated with patch antennas, and irradiated terahertz electromagnetic wave onto them. The antenna loss was considerably reduced by an optimized structure, and thus, clear photon-assisted tunneling with large incident power was achieved. The observed results were well explained by the photon-assisted tunneling with multi-photon process of stimulated emission and absorption The terahertz optical gain was deduced from the observed stimulated emission rate. Using these results, we performed theoretical analysis of amplification characteristics of the proposed three-terminal device, and showed that power amplification up to several terahertz is possible. Necessary structures for these characteristics were also designed. Less

在本计画中，我们提出一种利用光子辅助跃迁与电子波拍频的超高频放大器的可能性，以实现一种新颖的电子元件为目标，我们做了以下工作：（i）建立绝缘体/半导体异质结构的磊晶成长及其应用于共振隧穿结构，这是所提出的元件的一部分;在外延生长方面，我们选择了带阶较大的CaF_2/Si和CaF_2/CdF_2异质结，并利用电离束外延技术建立了共振隧穿结构的生长条件。采用选择性生长的方法，在Si衬底上用SiO_2掩模制作了几百纳米的窗口，优化了外延层的生长质量，使外延层的质量得到了很大的提高。具有高噪声的共振隧穿二极管 ...更多信息为了观察光子辅助隧穿效应，我们制作了小面积的GaInAs/InAlAs三势垒共振隧穿二极管，并将其与贴片天线集成，在其上照射太赫兹电磁波。通过优化结构，天线损耗大大降低，从而实现了大入射功率下清晰的光子辅助隧穿。利用光子辅助隧穿的多光子受激发射和吸收过程很好地解释了观测结果。从观测到的受激发射率推导出了太赫兹光增益。利用这些结果，我们进行了理论分析的放大特性的三端设备，并表明，功率放大到几个太赫兹是可能的。并针对这些特点设计了必要的结构。少