Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves
开发太赫兹波实现大容量无线通信的设备和系统
基本信息
- 批准号:21226010
- 负责人:
- 金额:$ 136.53万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (S)
- 财政年份:2009
- 资助国家:日本
- 起止时间:2009-05-11 至 2014-03-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Toward realization of high-capacity wireless communications in the undeveloped terahertz frequency region, we investigated oscillation and modulation of terahertz waves, and wireless data transmission. For the oscillation device, we achieved room-temperature oscillation at 1.55 THz using resonant tunneling diodes with reduced electron delay, which is the highest frequency of semiconductor electron devices. High-power oscillation and high-speed direct modulation of these oscillators were achieved with the structure optimization of the integrated micro-antennas. Modulators for terahertz waves with optical signal and transistors with high current drivability for modulation were also obtained. Wireless data transmission was demonstrated with the resonant- tunneling-diode transmitter and Schottky-barrier-diode receiver, and feasibility of high-capacity communication was obtained.
为了在未开发的太赫兹频段实现高容量的无线通信,我们研究了太赫兹波的振荡和调制,以及无线数据传输。对于振荡器件,我们使用共振隧穿二极管实现了1.55THz的室温振荡,降低了电子延迟,这是半导体电子器件中最高的频率。通过对集成微天线的结构优化,实现了这些振荡器的高功率振荡和高速直接调制。还得到了具有光信号的太赫兹波调制器和可用于调制的大电流驱动晶体管。利用共振隧穿二极管发射机和肖特基势垒二极管接收机进行了无线数据传输,得出了实现大容量通信的可行性。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas
- DOI:10.1109/icimw.2009.5324766
- 发表时间:2009-11
- 期刊:
- 影响因子:0
- 作者:M. Shiraishi;S. Suzuki;A. Teranishi;M. Asada;H. Sugiyama;H. Yokoyama
- 通讯作者:M. Shiraishi;S. Suzuki;A. Teranishi;M. Asada;H. Sugiyama;H. Yokoyama
Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness
- DOI:10.1007/s10762-014-0058-z
- 发表时间:2014-02
- 期刊:
- 影响因子:0
- 作者:H. Kanaya;R. Sogabe;T. Maekawa;S. Suzuki;M. Asada
- 通讯作者:H. Kanaya;R. Sogabe;T. Maekawa;S. Suzuki;M. Asada
Increaseoi Cut-off Frequency and Responsivity Measurement of Ni-InP Schottky Barrier Diode Integrated with a Bow-Tie Antenna
增加与蝴蝶结天线集成的 Ni-InP 肖特基势垒二极管的截止频率和响应度测量
- DOI:
- 发表时间:2012
- 期刊:
- 影响因子:0
- 作者:Y. Takase;et al.;K.Maruyama
- 通讯作者:K.Maruyama
BCB貼り付け法によるSi基板上GaInAsP細線1×2MMIの作製
BCB粘贴法在Si衬底上制作GaInAsP细线1×2 MMI
- DOI:
- 发表时间:2012
- 期刊:
- 影响因子:0
- 作者:Sakai Y;Inoue S;Harada A;Shimazaki K and Takagi S;船水尚行;Kazuhiko Komatsu;李智恩
- 通讯作者:李智恩
Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
埋入 SiO2 线的 InP/InGaAs DHBT 的制造
- DOI:10.1587/transele.e94.c.830
- 发表时间:2011
- 期刊:
- 影响因子:0.5
- 作者:N.Takebe;T.Kobayashi;H.Suzuki;Y.Miyamoto;K.Furuya
- 通讯作者:K.Furuya
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ASADA Masahiro其他文献
Phase Locking and Frequency Tuning of Resonant-Tunneling-Diode Terahertz Oscillators
谐振隧道二极管太赫兹振荡器的锁相和频率调谐
- DOI:
10.1587/transele.e101.c.183 - 发表时间:
2018 - 期刊:
- 影响因子:0.5
- 作者:
OGINO Kota;SUZUKI Safumi;ASADA Masahiro - 通讯作者:
ASADA Masahiro
ASADA Masahiro的其他文献
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{{ truncateString('ASADA Masahiro', 18)}}的其他基金
Analysis of Molecular Mechanisms of Apert Syndorme
阿佩尔综合征的分子机制分析
- 批准号:
21590088 - 财政年份:2009
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Scientific Research (C)
Study of terahertz electron devices with high power in wide frequency range using quantum nanostructures
利用量子纳米结构研究宽频率范围高功率太赫兹电子器件
- 批准号:
18206040 - 财政年份:2006
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
A Fundamental Study of Triode Amplifier Devices in the Optical Range
光范围内三极管放大器器件的基础研究
- 批准号:
13450137 - 财政年份:2001
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
A Study of Metal/Insulator/Semiconductor Super-Heterostructure Material Systems for Multifunctional Electron Devices
多功能电子器件金属/绝缘体/半导体超异质结构材料体系研究
- 批准号:
13555089 - 财政年份:2001
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
A Study of High-Functional Material System for Opto-Electronic Integrated Devices with Metal/Insulator Heterostructure Superlattices
金属/绝缘体异质结构超晶格光电集成器件高性能材料体系研究
- 批准号:
11555084 - 财政年份:1999
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Beating Effect of Traveling Electron Waves bv Terahertz Electromagnetic Wave and Its Application to Ultra-High Speed Three-Terminal Devices
太赫兹电磁波行波电子波的拍频效应及其在超高速三端器件中的应用
- 批准号:
11450136 - 财政年份:1999
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B).
Fundamental Research for Three-Terminal Amplifier Device in the Terahertz Range Using Photon-Assisted Tunneling
利用光子辅助隧道效应的太赫兹三端放大器装置的基础研究
- 批准号:
09450139 - 财政年份:1997
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Research on Wave Phenomena of Hot Electron at the Insulator Interface and Its Application to Functional Electron Devices
绝缘体界面热电子波动现象研究及其在功能电子器件中的应用
- 批准号:
07455132 - 财政年份:1995
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Fundamental Study of Ultra-High Speed Electron Devices with Metal-Insulator Single-Crystalline Ultra-Thin Layrs
金属-绝缘体单晶超薄层超高速电子器件的基础研究
- 批准号:
03452179 - 财政年份:1991
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Research of Ultra-High-Speed Optical Devices Using Multi Dimensional Quantum-Well Structure
多维量子阱结构超高速光器件研究
- 批准号:
63850059 - 财政年份:1988
- 资助金额:
$ 136.53万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B).
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Time-domain coherence measurement and substitution effect of HTSC THz source
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- 批准号:
26286006 - 财政年份:2014
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$ 136.53万 - 项目类别:
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$ 136.53万 - 项目类别:
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