Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves
Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves
批准号:
21226010
负责人:
ASADA Masahiro
金额:
$136.53万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (S)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009-05-11 至 2014-03-31
中文摘要
为了在尚未开发的太赫兹频段实现大容量的无线通信,我们研究了太赫兹波的振荡和调制以及无线数据传输。对于振荡器件,我们实现了室温振荡在1.55太赫兹使用共振隧穿二极管与减少电子延迟,这是半导体电子器件的最高频率。通过对集成微天线的结构优化,实现了这些振荡器的大功率振荡和高速直接调制。还获得了用于具有光信号的太赫兹波的调制器和用于调制的具有高电流驱动能力的晶体管。利用谐振隧穿二极管发射器和肖特基势垒二极管接收器实现了无线数据传输,获得了大容量通信的可行性。
英文摘要
Toward realization of high-capacity wireless communications in the undeveloped terahertz frequency region, we investigated oscillation and modulation of terahertz waves, and wireless data transmission. For the oscillation device, we achieved room-temperature oscillation at 1.55 THz using resonant tunneling diodes with reduced electron delay, which is the highest frequency of semiconductor electron devices. High-power oscillation and high-speed direct modulation of these oscillators were achieved with the structure optimization of the integrated micro-antennas. Modulators for terahertz waves with optical signal and transistors with high current drivability for modulation were also obtained. Wireless data transmission was demonstrated with the resonant- tunneling-diode transmitter and Schottky-barrier-diode receiver, and feasibility of high-capacity communication was obtained.
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DOI:
10.1109/icimw.2009.5324766
发表时间:
2009-11
期刊:
2009 34th International Conference on Infrared, Millimeter, and Terahertz Waves
影响因子:
--
作者:
[M. Shiraishi;S. Suzuki;A. Teranishi;M. Asada;H. Sugiyama;H. Yokoyama]
通讯作者:
M. Shiraishi;S. Suzuki;A. Teranishi;M. Asada;H. Sugiyama;H. Yokoyama
DOI:
10.1007/s10762-014-0058-z
发表时间:
2014-02
期刊:
Journal of Infrared, Millimeter, and Terahertz Waves
影响因子:
--
作者:
[H. Kanaya;R. Sogabe;T. Maekawa;S. Suzuki;M. Asada]
通讯作者:
H. Kanaya;R. Sogabe;T. Maekawa;S. Suzuki;M. Asada
Increaseoi Cut-off Frequency and Responsivity Measurement of Ni-InP Schottky Barrier Diode Integrated with a Bow-Tie Antenna
增加与蝴蝶结天线集成的 Ni-InP 肖特基势垒二极管的截止频率和响应度测量
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Y. Takase, et al., K.Maruyama]
通讯作者:
K.Maruyama
BCB貼り付け法によるSi基板上GaInAsP細線1×2MMIの作製
BCB粘贴法在Si衬底上制作GaInAsP细线1×2 MMI
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Sakai Y, Inoue S, Harada A, Shimazaki K and Takagi S, 船水尚行, Kazuhiko Komatsu, 李智恩]
通讯作者:
李智恩
Fabrication of InP/InGaAs DHBTs with Buried SiO2 Wires
埋入 SiO2 线的 InP/InGaAs DHBT 的制造
DOI:
10.1587/transele.e94.c.830
发表时间:
2011
期刊:
IEICE Transactions on Electronics
影响因子:
0.5
作者:
[N.Takebe, T.Kobayashi, H.Suzuki, Y.Miyamoto, K.Furuya]
通讯作者:
K.Furuya
共 326 条
Analysis of Molecular Mechanisms of Apert Syndorme
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批准号:21590088
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
-
财政年份:2009
-
负责人:ASADA Masahiro
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依托单位:
Study of terahertz electron devices with high power in wide frequency range using quantum nanostructures
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批准号:18206040
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.95万
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财政年份:2006
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负责人:ASADA Masahiro
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依托单位:
A Fundamental Study of Triode Amplifier Devices in the Optical Range
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批准号:13450137
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.05万
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财政年份:2001
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负责人:ASADA Masahiro
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依托单位:
A Study of Metal/Insulator/Semiconductor Super-Heterostructure Material Systems for Multifunctional Electron Devices
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批准号:13555089
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.19万
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财政年份:2001
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负责人:ASADA Masahiro
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依托单位:
A Study of High-Functional Material System for Opto-Electronic Integrated Devices with Metal/Insulator Heterostructure Superlattices
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批准号:11555084
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$8.26万
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财政年份:1999
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负责人:ASADA Masahiro
-
依托单位:
Beating Effect of Traveling Electron Waves bv Terahertz Electromagnetic Wave and Its Application to Ultra-High Speed Three-Terminal Devices
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批准号:11450136
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$9.15万
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财政年份:1999
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负责人:ASADA Masahiro
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依托单位:
Fundamental Research for Three-Terminal Amplifier Device in the Terahertz Range Using Photon-Assisted Tunneling
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批准号:09450139
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.87万
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财政年份:1997
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负责人:ASADA Masahiro
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依托单位:
Research on Wave Phenomena of Hot Electron at the Insulator Interface and Its Application to Functional Electron Devices
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批准号:07455132
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.84万
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财政年份:1995
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负责人:ASADA Masahiro
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依托单位:
Fundamental Study of Ultra-High Speed Electron Devices with Metal-Insulator Single-Crystalline Ultra-Thin Layrs
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批准号:03452179
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$4.16万
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财政年份:1991
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负责人:ASADA Masahiro
-
依托单位:
Research of Ultra-High-Speed Optical Devices Using Multi Dimensional Quantum-Well Structure
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批准号:63850059
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项目类别:Grant-in-Aid for Developmental Scientific Research (B).
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资助金额:$17.79万
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财政年份:1988
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负责人:ASADA Masahiro
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依托单位:
Basic Research of UltraーHigh-Speed ThreeーTerminal Electronic Device Using Metal-Insulator Superlattice
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批准号:63420035
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项目类别:Grant-in-Aid for General Scientific Research (A)
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资助金额:$29.76万
-
财政年份:1988
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负责人:ASADA Masahiro
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依托单位:
海外基金