Preparation of Fact-Ion Conductive Thin Films as nano-sized Battery Electrolytes

目前的研究是根据一个要求开发光学存储器材料和电子电池来开发精细尺度固态电池。系统F-O-Si-Pb和CuI-MoO_4-P_2O_5的薄膜是用射频分离技术及其微观结构、电条件和相位变化来制备的。系统F-O-Si-PbA的无模薄膜在条件下发射射频-射射：Ar室压力： 0.06-0.07 Torr，射频功率：100 W，发射时间：45分钟。X射线光电子光谱显示了荧光原子均匀分布在薄膜上，但在从表面到薄膜基底界面的方向上，F-Si/F-Pb的比率被分解为F-Si/F-Pb。结果是由一种在非桥接氧化物中增加到反应Si-O-Si->Si-F+Si-O^-计算的。3毫瓦氦-Ne激光束的辐射（lambda= 632.8纳米）在11毫米辐射区域诱导1/500秒石英晶体，独立于荧光含量，但不依赖于预期的PbF 2高导电性阶段。Fluorine ionic conductivity依赖于Arrhenius型温度，在500 K处= 1.1 x10 -5 S/cm，2个剂量大于相应的bulk玻璃，并激活能量为106.5 kJ/mol. 2。系统CuI-MoO_4-P_2 O_5 A target of a composition 25 CuI、25 Cu_2 O、25 MoO_4、25 Cu_3（PO_4）_3 was rf-sputtered with the same conditions above to prepare amorphous films。他们有一个粒子微结构，并在下面550 K的条件下使用较小的10^\-8> S/cm。在rf-power grew cubic particles of gamma-CuI的同时，Cu原子是不同的大部分。激光辐射双洞在直径为1/500年代，而在1/500年代至12年代，在1年代辐射时，没有晶体辐射。

The present research was exploited based on a demand for developing optical memory materials and electrolytes for fine scale solid batteries. Thin films of the systems F-O-Si-Pb and CuI-MoO_4-P_2O_5 were prepared with an rf-sputtering technique and their microstructure, electrical conductivity and phase change due to laser irradiation.1. Amorphous thin films of the system F-O-Si-PbAmorphous thin films of the system F-O-Si-Pb were rf-sputtered under the conditions : the Ar chamber pressure : 0.06-0.07 Torr, rf-power : 100W, sputtering time : 45min. X-ray photoelectron spectra showed that the fluorine atoms were homogeneously distributed in the films but the ratio F-Si/F-Pb decreased in the direction from the surface to the film-substrate interface. The results were accounted for by an increase in non-bridging oxygen due to a reaction Si-O-Si->Si-F+Si-O^-. Irradiation of 3mW He-Ne laser beam (lambda=632.8nm) for 1/500s induced crystallization of a quartz in the area of 11mum radium, independent of the fluorine content, but not induced an expected PbF2 phase of high conductivity. Fluorine ionic conductivity obeyed an Arrhenius type temperature dependence with sigma=1.1x10-5 S/cm at 500K, two orders of magnitude larger than the corresponding bulk glass, and activation energy of 106.5kJ/mol.2. Amorphous thin films of the system CuI-MoO_4-P_2O_5A target of a composition 25CuI・25Cu_2O・25MoO_4・25Cu_3(PO_4)_3 was rf-sputtered with the same conditions above to prepare amorphous films. They had a particular microstructure and were insulators below 550K with conductivity as small as 10^<-8> S/cm. The increase in the rf-power grew cubic particles of gamma-CuI while a large fraction of Cu atoms were divalent. The laser irradiation dug holes of 8mum in diameter even at 1/500 s and the holes grew to 12 at 1s irradiation, whereas no crystallization was observed.