Low Temperature and Large-Area Deposition of 3C-SiC Films on Si by AC Plasma-Assisted CVD.

通过交流等离子体辅助 CVD 在 Si 上低温大面积沉积 3C-SiC 薄膜。

• 批准号: 06650015
• 负责人: SHIMIZU Hideki
• 金额: $ 1.34万
• 依托单位: Aichi University of Education
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06650015/
• 关键词: Plasma-Assisted CVD; 3C-SiC; Hetero-epitaxisyal; Low Temperature Deposition; Large-Area Deposition; Plasma Processing; Optical Emission Spectroscopy; Plasma Temperature

Large area depositions of 3C-SiC films on Si have been investigated by modified plasma electrode. To make the plasma wider, the pressure was reduced from 170 Torr of the previous pressure to 100 Torr and plasma electrodes were modified.SiC thin films were deposited on 60x40 mm^2 Si (100) wafer by AC plasma-assisted CVD technique. Carbonization layrs formed at the substrate of 900-1000ﾟC were monocrystalline SiC films with smooth and flat surfaces except of substrate edges. Nearly monocrystalline films of grown layrs were obtained at the substrate temperature of 950ﾟC.The grown layr had a tendency to include a polycrystalline phase and SiC spherical particles with increasing the flow rate of SiH_4. When making a distance of the SiH_4 nozzle and the substrate wider, The grown layrs were relatively smooth and flat without SiC spherical particles. However they were polycrystalline SiC films.The excess supply of Si sources onto the growing surface make growth layr polycrystalline phase. In other words, it is suggested that perfect monocrystalline SiC growth layr can be formed at low substrate temperature by supplying the SiH_4 gas and DC bias adequately.

采用改进的等离子体电极在Si衬底上大面积沉积3C-SiC薄膜。为了使等离子体更宽，将等离子体的压力从原来的170 Torr降低到100 Torr，并对等离子体电极进行了改进。在900-1000 ℃的衬底上形成的碳化层为单晶SiC薄膜，除衬底边缘外，表面光滑平整。衬底温度为950 ℃时，生长层的薄膜接近单晶，随着SiH_4流量的增加，生长层中有多晶相和SiC球形颗粒的趋势。当SiH_4喷嘴与衬底的距离增大时，生长层相对光滑平整，没有SiC球形颗粒。但它们都是多晶SiC薄膜，Si源在生长表面的过量供给使生长层为多晶相。也就是说，通过适当地供给SiH_4气体和直流偏压，可以在较低的衬底温度下形成完整的SiC单晶生长层。

项目成果

H.Shimizu: "Low Temperature and Large-Are a Deposition of 3C-SiC on Si by AC Plasma-Assisted CVD." Proceedings of the 6th International Conference on Silicon Carbide and Related Materials-1995. (to be publish). (1996)

H.Shimizu：“通过 AC 等离子体辅助 CVD 在 Si 上低温大面积沉积 3C-SiC。”

H.Shimizu: "Low Temperature Growth of 3C-SiC Films on Si Substrate by AC Plasma-Assisted CVD." Proceeding of the 12th Symposium on Plasma Processing. 12. 329-332 (1995)

H.Shimizu：“通过交流等离子体辅助 CVD 在硅衬底上低温生长 3C-SiC 薄膜。”

H.Shimizu: "Low Temperature and Large-Areu Deposition of 3C-SiC on Si by AC Plasma-Assisted CVD." Proceedings of the 6th International Conference on Silicon Carbide and Related Materials-1995. (to be publish). (1996)

H.Shimizu：“通过 AC 等离子体辅助 CVD 在 Si 上低温、大面积沉积 3C-SiC。”

H.Shimizu: "Low Temperature Growth of 3C-SiC Films on Si Substrrate by AC Plasma-Assisted CVD." Proceedings of 12th Symposium on Plasma Processing. 12. 329-332 (1995)

H.Shimizu：“通过交流等离子体辅助 CVD 在硅衬底上低温生长 3C-SiC 薄膜。”

清水秀己: "HF洗浄後のSi基板表面の偏光解析" 愛知教育大学研究報告. 45. 31-37 (1996)

清水英树：“HF 清洗后硅基板表面的极化分析”爱知教育大学研究报告45. 31-37 (1996)。