权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Research of High Performance Lasers and Novel Photonic Devices using Strain-Compensated Low-Dimensional Quantum Structures

使用应变补偿低维量子结构的高性能激光器和新型光子器件研究

基本信息

批准号：
13305021
负责人：
ARAI Shigehisa
金额：
$ 32.12万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

项目摘要

Aiming at high-performance semiconductor lasers and novel photonic devices, we have developed strain-compensated low-dimensional quantum structures with high-quality interfaces and high-density nanostructures.Accomplishments obtained in this research are as follows:(1)A RT-CW operation of GaInAsP/InP quantum-wire lasers (23 nm wide, 5 stacked quantum-wires), fabricated by electron beam lithography, CH_4/H_2-reactive ion etching and two-step organometallic vapor-phase-epitaxial growth processes, was realized for the first time. Lifetime measurement of this quantum-wire laser was also carried out at RT-CW condition, and no noticeable performance degradation was observed even after more than 10,000 hours.(2)GaInAsP/InP strain-compensated 5-stacked compressively strained quantum-wire lasers with the wire width of 14 nm in the period of 80 nm were realized using this fabrication method.(3)GaInAsP/InP multiple-quantum-wire structures with the wire widths of 18 nm and 27 nm in the period of 8 … More 0 nm were fabricated by this fabrication method. Size distributions of these quantum-wire structures were measured by scanning electron microscope and the standard deviation was estimated to be less than 10%.(4)Wire width dependence of the large energy blue shift in GaInAsP/InP partially strain-compensated vertically-stacked multiple-quantum-wire structures is accurately explained for the first time using an 8 band k・p theory without any fitting parameter. It was found that unlike quantum films, the energy-band structures of strained quantum-wires depend on the amount of strain-compensation in barrier regions and on the number of wire layers, in the vertical stack.(5)By using a lateral quantum confinement effect, a new type of distributed reflector laser, consisting of a wirelike active section and a passive DBR section with quantum-wire structure was realized. A high performance operation with a threshold current of 2.8 mA, differential quantum efficiency of 35%/facet and sub-mode suppression ratio (SMSR) of 55 dB, was obtained under a RT-CW condition. Less

针对高性能半导体激光器和新型光子器件，我们研制了具有高质量界面和高密度纳米结构的应变补偿低维量子结构，取得了如下成果：（1）首次实现了GaInAsP/InP量子线激光器（23 nm宽，5条量子线堆叠）的RT-CW运转，该激光器采用电子束光刻、CH_4/H_2反应离子刻蚀和两步有机金属气相外延生长工艺制备。该量子线激光器的寿命测量也在RT-CW条件下进行，即使超过10，000小时也没有观察到明显的性能下降。（2）利用该方法实现了线宽为14 nm、周期为80 nm的GaInAsP/InP应变补偿五层压应变量子线激光器。（3）GaInAsP/InP多量子线结构，线宽为18 nm和27 nm，周期为8 ...更多信息 0 nm的薄膜。用扫描电子显微镜测量了这些量子线结构的尺寸分布，估计标准偏差小于10%。（4）首次用8带k·p理论精确解释了GaInAsP/InP部分应变补偿垂直堆叠多量子线结构中大能量蓝移的线宽依赖性。结果发现，与量子薄膜不同，应变量子线的能带结构取决于势垒区的应变补偿量和垂直堆叠中的线层数量。(5)By摘要利用横向量子限制效应，实现了一种新型的分布式反射激光器，它由线状有源区和量子线结构的无源DBR区组成。在RT-CW条件下，获得了阈值电流为2.8 mA，微分量子效率为35%/面，子模抑制比（SMSR）为55 dB的高性能操作。少