Molecular dynamics study of epitaxial growth of silicon thin film via a plasma CVD

点击翻译按钮获取中文摘要

In this project, the initial formation process of Si precursor clusters during the thin film synthesis via a plasma CVD is investigated by the molecular dynamics (MD) simulation. The threshold of conditions for the epitaxial/grain growth is estimated from the simulation results. In addition, the MD simulation of the multiple deposition process of Si clusters is performed and it is revealed that the successive deposition of smaller cluster leads to the epitaxial growth. Moreover, the effect of hydrogen on the Si epitaxial growth is discussed. From the MD simulation, it is revealed that epitaxial growth can be occurred with SiH clusters, which are smaller than the Si cluster used for aforementioned simulation.