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Preparation of New Magnetic Devices by "Light-Enhanced" Ferrite Plating

“光增强”铁氧体电镀制备新型磁性器件

基本信息

批准号：
02555058
负责人：
ABE Masanori
金额：
$ 8.77万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1992
项目状态：
已结题

项目摘要

By "light-enhanced ferrite plating" using a Xe lamp, the film deposition rate of Fe_<3-X>M_XOV_4 (M=Mn, Ni, Zn, and Co) was successfully enhanced by factor 10 compared to conventional ferrite plating without using the lamp. The deposition rate does not depend on x. When synthesized from an aqueous solution at a low metal concentration, the film has a columnar structure perpendicular to film plane. The columnar structure disappears when synthesized at a high metal concentration. Adding dextran to the aqueous solution improved smoothness in the film surface.By applying Ar laser beams on the substrate, we further enhanced the film deposition rate 7 times (70 times) compared to the light enhanced ferrite plating (conventional ferrite plating). The film grows only the area where laser beams impinges upon. We can this "laser-enhanced ferrite plating." The marked deposition rate enhancement is ascribed to local temperature rise at the laser-irradiated area. By moving the substrate with a stage, we successfully made patterned ferrite films. This technique of selected-area ferrite film growth by laser-enhanced ferrite plating will be useful in fabricating ferrite film devices, since it enables patterning of ferrite film to be carried out without a mask.Since we have in this study established methods and conditions for preparing Fe_<3-X>M_XO_4 films by light/laser enhanced ferrite plating, we are preparing to fabricate such devices as microwave circulators and inductors measure their performances.

通过使用白炽灯的“光增强铁氧体电镀”，<3-X>与不使用灯的常规铁氧体电镀相比，Fe_ M_XOV_4（M=Mn、Ni、Zn和Co）的膜沉积速率成功地提高了10倍。沉积速率不依赖于x。当由低金属浓度的水溶液合成时，膜具有垂直于膜平面的柱状结构。当在高金属浓度下合成时，柱状结构消失。通过在水溶液中添加葡聚糖，提高了膜表面的平滑性。通过在基板上照射Ar激光，与光增强型铁氧体电镀（常规铁氧体电镀）相比，进一步提高了7倍（70倍）的成膜速度。薄膜只在激光束照射的区域生长。我们可以用这个“激光强化铁氧体镀层。“显著的沉积速率提高归因于激光照射区域的局部温度升高。通过用工作台移动衬底，我们成功地制作了图案化的铁氧体薄膜。由于本研究建立了光/激光增强铁氧体镀膜法制备Fe_ M_XO_4薄膜的方法和条件<3-X>，我们正在准备制作微波环行器和电感器等器件，并测量它们的性能。