Preparation of New Magnetic Devices by "Light-Enhanced" Ferrite Plating

利用氙灯“光增强铁氧体镀膜”，与不使用氙灯的常规铁氧体镀膜相比，成功地提高了Fe_&lt；3-X&GT；M_xOV_4(M=Mn，Ni，Zn，Co)的薄膜沉积速率10倍。沉积速率不依赖于x。当从低金属浓度的水溶液中合成时，薄膜具有垂直于薄膜平面的柱状结构。在较高的金属浓度下合成时，柱状结构消失。在水溶液中加入葡聚糖改善了薄膜表面的光滑度，通过在衬底上施加Ar激光，薄膜沉积速度比光增强铁氧体镀膜(常规铁氧体镀膜)进一步提高了7倍(70倍)。胶片只在激光束撞击的区域生长。我们可以进行这种“激光强化铁氧体电镀”。沉积速率的显著提高归因于激光辐照区域的局部温度升高。通过移动衬底和工作台，我们成功地制备了图案化铁氧体薄膜。利用激光增强铁氧体薄膜生长选区铁氧体薄膜的技术将在铁氧体薄膜器件的制备中得到应用，因为它使得铁氧体薄膜的图案化可以在没有掩模的情况下进行。由于本研究已经建立了光/激光增强铁氧体薄膜制备Fe_&lt；3-X&GT；M_xO_4薄膜的方法和条件，我们正在准备制作微波环行器和电感等器件，测试其性能。

By "light-enhanced ferrite plating" using a Xe lamp, the film deposition rate of Fe_<3-X>M_XOV_4 (M=Mn, Ni, Zn, and Co) was successfully enhanced by factor 10 compared to conventional ferrite plating without using the lamp. The deposition rate does not depend on x. When synthesized from an aqueous solution at a low metal concentration, the film has a columnar structure perpendicular to film plane. The columnar structure disappears when synthesized at a high metal concentration. Adding dextran to the aqueous solution improved smoothness in the film surface.By applying Ar laser beams on the substrate, we further enhanced the film deposition rate 7 times (70 times) compared to the light enhanced ferrite plating (conventional ferrite plating). The film grows only the area where laser beams impinges upon. We can this "laser-enhanced ferrite plating." The marked deposition rate enhancement is ascribed to local temperature rise at the laser-irradiated area. By moving the substrate with a stage, we successfully made patterned ferrite films. This technique of selected-area ferrite film growth by laser-enhanced ferrite plating will be useful in fabricating ferrite film devices, since it enables patterning of ferrite film to be carried out without a mask.Since we have in this study established methods and conditions for preparing Fe_<3-X>M_XO_4 films by light/laser enhanced ferrite plating, we are preparing to fabricate such devices as microwave circulators and inductors measure their performances.