Development of Comprehensive Set of LSI CAD Benchmarks
Development of Comprehensive Set of LSI CAD Benchmarks
批准号:
06558041
负责人:
ONODERA Hidetoshi
金额:
$4.61万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
财政年份:
1994
资助国家:
日本
项目状态:
已结题
起止时间:
1994 至 1995
中文摘要
我们已经开发了一套全面的基准定量评估LSI CAD工具。基准集在几个抽象级别上描述相同的电路,因此我们可以自由地设置任何类型的基准。已经为基准集开发了一组独立于进程的标准库。KUE-CHIP2被选为综合基准集的第一个候选。我们的成就总结如下。标准库的开发我们以CMOS标准单元库的形式开发了一套标准的进程独立库。该库集旨在用于综合基准,也用于公共领域的研究和教育用途的免费库。标准库不是一组库,而是一组库生成工具,这些工具可以根据几个过程参数自动生成特定于过程的库。使用符号布局方法生成布局。采用一种考虑信号转换过程中短路电流的分析方法,分析了信号的延迟和功耗特性。通过仿真和测试芯片对标准库进行了验证。开发一套全面的基准作为全面基准集的第一个例子,我们选择了KUE-CHIP2,这是一款为教育用途开发的8位微处理器。KUE-CHIP2的VHDL描述已被开发并通过一组用于功能验证的测试模式进行了验证,该测试模式随其原始UDL/I模型一起提供。对一组全面的基准进行评估通过对标准库执行逻辑合成直至自动布局,对KUE-CHIP2基准进行了评估。使用synosis(逻辑综合)和Alliance(自动布局)设计编译器对其进行了成功的评估。
英文摘要
We have developed a comprehensive set of benchmarks for quantitative evaluation of LSI CAD tools. The benchmark set describes the same circuit in several levels of abstraction so that we can set up any type of benchmarks freely. A standard set of process independent libraries has been developed for the benchmark set. KUE-CHIP2 is selected for the first candidate of the comprehensive set of benchmarks.Our achivements are summarized as follows.1.The development of standard set of librariesWe have developed a standard set of process independent libraries in a form of CMOS standard cell libraries. The library set is intended to use in comprehensive benchmarks, and also for public domain free libraries for research and educational use. The standard library is not a single set of libraries but a set of library generation tools that automatically produce process specific libraries from several process parameters. Symbolic layout method is used for layout generation. Delay and power dissipation characteristics are analzed by a new analytical method that considers short circuit currents during signal transition. The standard libraries are verified by simulation and also by a test chip.2.Development of a comprehensive set of benchmarksAs the first example of the comprehensive benchmark set, we have selected KUE-CHIP2 which is a 8-bit micro processor developed for educational use. VHDL description of KUE-CHIP2 has been developed and verified by a set of test patterns for functional verification which is supplied with its original UDL/I model.3.Evaluation of a comprehensive set of benchmarksThe KUE-CHIP2 benchmark has been evaluated by performing logic synthesis down to automatic layout with the standard libraries. It is successfully evaluated using Design Compiler of Synopsis (logic synthesis) and Alliance (automatic layout).
期刊论文(21)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
H. Onodera: "Estimation of Short-Circuit Power Dissipation and Its Influence on Propagation Delay for Static CMOS Gates" Proc. IEEE ISCAS. (発表予定). (1996)
H. Onodera:“静态 CMOS 门的短路功耗及其对传播延迟的影响”Proc。IEEE ISCAS(即将发表)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
H. Onodera: "Model-Adaptable MOSFET Parameter Extraction Method Using a Common Intermediate Model" Proc. IEEE ASIC Conf.323-326 (1994)
H. Onodera:“使用通用中间模型的模型自适应 MOSFET 参数提取方法”Proc。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
H.Onodera: "Model-Adaptable MOSFET Parameter Extraction Method Using a Common Intermediate Model" Proc.IEEE ASIC Conf.323-326 (1994)
H.Onodera:“使用通用中间模型的模型自适应 MOSFET 参数提取方法”Proc.IEEE ASIC Conf.323-326 (1994)
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
H.Onodera: "Estimation of Short Circuit Power Dissipation for Static CMOS Gates" IEICE Trans.Fundamentals. Vol.E79-A. (1996)
H.Onodera:“静态 CMOS 门的短路功耗估算”IEICE Trans.Fundamentals。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
H.Onodera: "Model-Adaptable MOSFET Parameter Extraction System" IEICE Trans.Fundamentals. Vol.E78-A. 569-572 (1995)
H.Onodera:“模型自适应 MOSFET 参数提取系统”IEICE Trans.Fundamentals。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 16 条
LSI design methodology that enables robust operation under the supply as low as threshold voltage by self-compensating performance variability
-
批准号:25280014
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.65万
-
财政年份:2013
-
负责人:ONODERA Hidetoshi
-
依托单位:
Integrated Circuit Design for Robust Operation under Low Supply Voltage
-
批准号:22300016
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.81万
-
财政年份:2010
-
负责人:ONODERA Hidetoshi
-
依托单位:
Variation and Defect Aware Design of Integrated Circuits
-
批准号:19300010
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.23万
-
财政年份:2007
-
负责人:ONODERA Hidetoshi
-
依托单位:
Research of a High-speed Signal Transmission Scheme for Integrated Circuits
-
批准号:14350186
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$10.88万
-
财政年份:2002
-
负责人:ONODERA Hidetoshi
-
依托单位:
Development of Statistical Performance Analysis and Optimization Methods for Large Scale Integrated Circuits
-
批准号:11555095
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$7.42万
-
财政年份:1999
-
负责人:ONODERA Hidetoshi
-
依托单位:
Development of a Functional LSI Achieving Low-rate Multimedia Data Transmission.
-
批准号:10450136
-
项目类别:Grant-in-Aid for Scientific Research (B).
-
资助金额:$6.98万
-
财政年份:1998
-
负责人:ONODERA Hidetoshi
-
依托单位:
Optimization of detailed design for UDSM (ultra deep submicron) integrated circuits
-
批准号:09650383
-
项目类别:Grant-in-Aid for Scientific Research (C)
-
资助金额:$2.43万
-
财政年份:1997
-
负责人:ONODERA Hidetoshi
-
依托单位:
Statistical modeling method for scaled MOSFET
-
批准号:08555085
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$4.8万
-
财政年份:1996
-
负责人:ONODERA Hidetoshi
-
依托单位:
Simultaneous Circuit and Layout Design Method for Analog LSIs under Performance Constraints
-
批准号:06680317
-
项目类别:Grant-in-Aid for General Scientific Research (C)
-
资助金额:$1.41万
-
财政年份:1994
-
负责人:ONODERA Hidetoshi
-
依托单位: