Integrated Circuit Design for Robust Operation under Low Supply Voltage
Integrated Circuit Design for Robust Operation under Low Supply Voltage
批准号:
22300016
负责人:
ONODERA Hidetoshi
金额:
$11.81万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2010
资助国家:
日本
项目状态:
已结题
起止时间:
2010 至 2012
中文摘要
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英文摘要
We have investigated on a design method that achieves robust circuit operation under low supply voltage of around 0.7 V. In particular, we have worked onthree topics:(1) built-in self monitor and compensation of die-to-die variation(2) sequential logic gates tolerating for within-die variation(3) evaluation of dynamic performance variation under low supply voltage.We have successfully developed variation-tolerant D-FFs, all-digital monitors and body-bias generator circuits for performance compensation, and accurate evaluation of delay fluctuation due to Random Telegraph Noise.
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A Body Bias Generator Compatible with Cell-based Design Flow for Within-die Variability Compensation
与基于单元的设计流程兼容的体偏置发生器,用于芯片内变异性补偿
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[Norihiro Kamae, Akira Tsuchiya, Hidetoshi Onodera]
通讯作者:
Hidetoshi Onodera
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发表时间:
2011
期刊:
影响因子:
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作者:
[松本高士, 伊東恭佑, 小林和淑, 小野寺秀俊]
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小野寺秀俊
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浅谈NBTI恢复特性在晶体管级老化补偿技术中的应用
DOI:
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发表时间:
2011
期刊:
影响因子:
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作者:
[松本高士, 牧野裕明, 小林和淑, 小野寺秀俊]
通讯作者:
小野寺秀俊
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作者:
[Y.Ichinomiya, Motoki Amagasaki, M.Kuga, Toshinori Sueyoshi, Masahiro Kondo]
通讯作者:
Masahiro Kondo
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关于NBTI/RTN对逻辑电路和SRAM可靠性的影响
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发表时间:
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共 59 条
LSI design methodology that enables robust operation under the supply as low as threshold voltage by self-compensating performance variability
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批准号:25280014
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.65万
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财政年份:2013
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负责人:ONODERA Hidetoshi
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依托单位:
Variation and Defect Aware Design of Integrated Circuits
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批准号:19300010
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.23万
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财政年份:2007
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负责人:ONODERA Hidetoshi
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依托单位:
Research of a High-speed Signal Transmission Scheme for Integrated Circuits
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批准号:14350186
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.88万
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财政年份:2002
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负责人:ONODERA Hidetoshi
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依托单位:
Development of Statistical Performance Analysis and Optimization Methods for Large Scale Integrated Circuits
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批准号:11555095
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.42万
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财政年份:1999
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负责人:ONODERA Hidetoshi
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依托单位:
Development of a Functional LSI Achieving Low-rate Multimedia Data Transmission.
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批准号:10450136
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$6.98万
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财政年份:1998
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负责人:ONODERA Hidetoshi
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依托单位:
Optimization of detailed design for UDSM (ultra deep submicron) integrated circuits
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批准号:09650383
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.43万
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财政年份:1997
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负责人:ONODERA Hidetoshi
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依托单位:
Statistical modeling method for scaled MOSFET
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批准号:08555085
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$4.8万
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财政年份:1996
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负责人:ONODERA Hidetoshi
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依托单位:
Development of Comprehensive Set of LSI CAD Benchmarks
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批准号:06558041
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$4.61万
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财政年份:1994
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负责人:ONODERA Hidetoshi
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依托单位:
Simultaneous Circuit and Layout Design Method for Analog LSIs under Performance Constraints
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批准号:06680317
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1994
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负责人:ONODERA Hidetoshi
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依托单位:
海外基金