Variation and Defect Aware Design of Integrated Circuits
Variation and Defect Aware Design of Integrated Circuits
批准号:
19300010
负责人:
ONODERA Hidetoshi
金额:
$12.23万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2009
中文摘要
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英文摘要
We have investigated on a design method that improves manufacturability and tolerance to variation as well as a method for compensating variation and defects. Simplification and regularity enhancement of layout patterns the effect of simplified and regularity-enhanced layouts have been quantitatively examined by simulation and real chip measurements. Vulnerability of FF timing characteristics under within-die variation has been pointed out and variation-tolerant design of FFs is proposed. On-chip monitor circuits for the estimation of die-to-die variation has been also developed.
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Effect of Regularity-Enhanced Layout on Variability and Circuit Performance of Standard Cells
规则性增强布局对标准单元可变性和电路性能的影响
DOI:
--
发表时间:
2010
期刊:
IPSJ Trans.System LSI Design Methodology 3
影响因子:
--
作者:
[H.Sunagawa, H.Terada, A.Tsuchiya, K.Kobayashi, H.Onodera]
通讯作者:
H.Onodera
DOI:
--
发表时间:
2009
期刊:
IEICE Transactions on Fundamentals vol.E92-A,no.12
影响因子:
--
作者:
[Takayuki Fukuoka, Akira Tsuchiya, Hidetoshi Onodera]
通讯作者:
Hidetoshi Onodera
Characterization of WID Delay Variability Using RO-array Test Structures
使用 RO 阵列测试结构表征 WID 延迟变化
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[Hidetoshi Onodera, Haruhiko Terada]
通讯作者:
Haruhiko Terada
統計的遅延解析における遅延分布間の最大値計算手法
统计时延分析中时延分布间最大值的计算方法
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[寺田 晴彦, 福岡 孝之, 土谷 亮, 小野寺 秀俊]
通讯作者:
小野寺 秀俊
Manufacturability-Aware Design of Standard Cells
标准单元的可制造性设计
DOI:
--
发表时间:
2008
期刊:
IEICE Transactions on Electronics E90-A
影响因子:
--
作者:
[Hirokazu Muta, Hidetoshi Onodera]
通讯作者:
Hidetoshi Onodera
共 10 条
LSI design methodology that enables robust operation under the supply as low as threshold voltage by self-compensating performance variability
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批准号:25280014
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.65万
-
财政年份:2013
-
负责人:ONODERA Hidetoshi
-
依托单位:
Integrated Circuit Design for Robust Operation under Low Supply Voltage
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批准号:22300016
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.81万
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财政年份:2010
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负责人:ONODERA Hidetoshi
-
依托单位:
Research of a High-speed Signal Transmission Scheme for Integrated Circuits
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批准号:14350186
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.88万
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财政年份:2002
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负责人:ONODERA Hidetoshi
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依托单位:
Development of Statistical Performance Analysis and Optimization Methods for Large Scale Integrated Circuits
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批准号:11555095
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.42万
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财政年份:1999
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负责人:ONODERA Hidetoshi
-
依托单位:
Development of a Functional LSI Achieving Low-rate Multimedia Data Transmission.
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批准号:10450136
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$6.98万
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财政年份:1998
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负责人:ONODERA Hidetoshi
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依托单位:
Optimization of detailed design for UDSM (ultra deep submicron) integrated circuits
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批准号:09650383
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.43万
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财政年份:1997
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负责人:ONODERA Hidetoshi
-
依托单位:
Statistical modeling method for scaled MOSFET
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批准号:08555085
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$4.8万
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财政年份:1996
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负责人:ONODERA Hidetoshi
-
依托单位:
Development of Comprehensive Set of LSI CAD Benchmarks
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批准号:06558041
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$4.61万
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财政年份:1994
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负责人:ONODERA Hidetoshi
-
依托单位:
Simultaneous Circuit and Layout Design Method for Analog LSIs under Performance Constraints
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批准号:06680317
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.41万
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财政年份:1994
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负责人:ONODERA Hidetoshi
-
依托单位: