Statistical modeling method for scaled MOSFET

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(a)Statistical MOSFET modeling using an intermediate modelMOSFETs need to be modeled in a various levels of details according to the needs in a design process of LSIs. We have developed a statistical modeling method which can be applied commonly to various models in a systematic way. The model adaptability is a schieved by the introduction of an intermediate statistical model which has a basic structure common to many models. The method for describing statistical characteristics by the intermediate model and the method for transforming intermediate model to target models are developed. The effectiveness of the method is verified experimentally by statistical modeling of 0.3mum MOSFETs using the BSIM3v3 model.(b)Matching analysis of CMOS Circuits with layout informationstatistical modeling of MOSFETs for matching analysis has been studied. Micro-loading effect of gate poly-silicon which affects final gate-length has been incorporated in the modeling. TEG structures are developed for the extraction of model parameters for the matching properties.(c)Development of CAD for statistical analysis with a command languageIn order to utilize the statistical modeling method developed in this project, we have developed a CAD framework which enables a designer to define his own procedure for statistical analysis using a command language.