Study on high density disk data storage using atomic force micorscopy

原子力显微镜高密度磁盘数据存储研究

• 批准号: 07555081
• 负责人: HANE Kazuhiro
• 金额: $ 3.26万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555081/
• 关键词: Atomic force microscopy; High density memory; Charge deposition; Micromachining; Scanning probe microscopy; 電荷畜積; 原子間力顕微鏡; ディスクメモリー; 静電容量; 誘電体薄膜; 原子間力顕微鏡(AFM); 超高密度メモリー; ナノメートル加工; 原子分子加工; 原子分子操作; 分極反転

It is indespensable to develope a high density data storage since the recording of the huge information becomes important according to the progress of multimedia. The memory density of the conventional optical deta storage is limitted by the pit size which is equal to a fraction of the laser light wavelength. On the other hand, the resolution of the newly invented scanning probe microscopy is not limitted by the light wavelenght, but is dependent on the tip radius of the probe or one atom on the top of the probe. And thus, unconventionally high resolution is obtained. In addition, nanometer scale pit can be generated by the application of voltage or load to the probe.In this study, advantageously using the high resolution of the scanning probe microscopy, especially the scanning electrostatic microscopy utilizing electrostatic force, a technique to store data at very high density by generating nanometer scale pits is studied. To improve the response of the probe microscopy, the elecrostatic force is effectively used and the micromachined probe having a high resonant frequency is desined. In the recording method, a new charge strage and reding technique using semiconductor probe, in which the depression of the semiconductor tip is monitored by the chapacitance change, is proposed and demonstareted. A new tortional resonator type probe has been fabricated for high speed data starage by silicon micormachining techinique.

随着多媒体技术的发展，海量信息的记录变得越来越重要，开发高密度的数据存储已势在必行。传统光学DATA存储器的存储密度受等于激光波长的一小部分的凹坑大小的限制。另一方面，新发明的扫描探针显微镜的分辨率不受光波长的限制，而取决于探针的尖端半径或探针顶部的一个原子。因此，获得了非常规的高分辨率。在本研究中，利用扫描探针显微镜的高分辨率，特别是利用静电作用力的扫描静电显微镜，研究了一种通过产生纳米级凹坑来实现高密度存储数据的技术。为了提高探针显微镜的响应速度，有效地利用了静电作用力，设计了具有较高谐振频率的微机械探头。在记录方法中，提出并证明了一种利用半导体探头的新的电荷应变和记录技术，其中半导体针尖的压低通过电容的变化来监测。采用硅微机械加工技术，研制了一种适用于高速数据采集的新型扭转谐振式探头。

项目成果

T.Goto and K.Hana: "Capacitance microscopy with a semiconductor probe" The 5th International Colloquimon Scanning Tunnel Microscopy. 45- (1997)

T.Goto 和 K.Hana：“带有半导体探针的电容显微镜”第五届国际座谈会扫描隧道显微镜。

T.Goto and K.Hane: "Study of capacitive recording by tapping mode capacitance microscopy" International Conference on Micromechatronics for Information and Precision Equipment (MIPE'97). 347-352 (1997)

T.Goto 和 K.Hane：“通过轻敲模式电容显微镜进行电容记录的研究”信息和精密设备微机电一体化国际会议 (MIPE97)。

T.Goto and K.Hane: ""Tapping mode capacitance microscopy of a nitride-oxide-silicon recording medium, "" Advances in Information Storage Systems. (in press). (1998)

T.Goto 和 K.Hane：“氮化物-氧化物-硅记录介质的轻敲模式电容显微镜”，“信息存储系统的进展”。

K.Goto, K.Hane: "Study of capacitance recording by tapping mode capacitance microscopy" Proc.MIPE '97. (1997)

K.Goto、K.Hane：“通过轻敲模式电容显微镜进行电容记录的研究”Proc.MIPE 97。

T.Goto and K.Hane: "Tapping mode capacitance microscopy" Rev.Sci.Insturum.68・1. 120-123 (1997)

T.Goto 和 K.Hane：“敲击模式电容显微镜”Rev.Sci.Insturum.68・1（1997）。