Study of optical micro systems by monolithic integration of silicon with nitride semiconductor
Study of optical micro systems by monolithic integration of silicon with nitride semiconductor
批准号:
19106007
负责人:
HANE Kazuhiro
金额:
$69.64万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (S)
财政年份:
2007
资助国家:
日本
项目状态:
已结题
起止时间:
2007 至 2011
中文摘要
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英文摘要
Integrating GaN light source devices with Si three-dimensional structures and micro actuators monolithically, functional micro-electro-mechanical systems (MEMS)for optical applications were developed. Crystal growth of GaN-LED on Si substrate, GaN crystal growth on micro-machined GaN/Si substrate, integration of GaN-LED with Si actuator, and fabrication of GaN actuator were carried out. Integrating GaN-LED with Si-MEMS, a variable lightning device, a micro fluorescent analysis chip etc. were demonstrated.
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DOI:
10.1109/transducers.2011.5969494
发表时间:
2011-06
期刊:
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference
影响因子:
--
作者:
[Y. Wang;T. Sasaki;T. Wu;F. Hu;K. Hane]
通讯作者:
Y. Wang;T. Sasaki;T. Wu;F. Hu;K. Hane
Integrated Fluorescent Analysis System with Monolithic GaN Light Emitting Diode on Si Platform
Si 平台上具有单片 GaN 发光二极管的集成荧光分析系统
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[H. Nakazato, H. Kawaguchi, A. Iwabuchi, K. Hane]
通讯作者:
K. Hane
Formation of a nitrified hafnium oxide buffer layer on silicon substra to and GaN quantum well crystal growth for GaN-Si hybrid optical MEMS
在硅衬底上形成氮化铪缓冲层以及用于 GaN-Si 混合光学 MEMS 的 GaN 量子阱晶体生长
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[大村達夫, 真砂佳史, 他, M.Uesugi, 本間貴士, H. Sameshima]
通讯作者:
H. Sameshima
A Freestanding GaN/HfO_2 Membrane Grown by Molecular Beam Epitaxy for GaN-Si Hybrid MEMS
用于 GaN-Si 混合 MEMS 的分子束外延生长的独立式 GaN/HfO_2 膜
DOI:
--
发表时间:
2009
期刊:
IEEE Journal of Selected Topics in Quantum Electronics 15(5)
影响因子:
--
作者:
[H. Sameshima, M. Wakui, F. Hu, K. Hane]
通讯作者:
K. Hane
DOI:
10.1186/1556-276x-6-117
发表时间:
2011-02-04
期刊:
Nanoscale research letters
影响因子:
--
作者:
[Wang Y, Hu F, Hane K]
通讯作者:
Hane K
共 41 条
High functional telecommunication devices using MEMS technology
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批准号:17068002
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$43.46万
-
财政年份:2005
-
负责人:HANE Kazuhiro
-
依托单位:
Tunable photonic devices fabricated by micro-nano machining for optical communication
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批准号:14102022
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$68.64万
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财政年份:2002
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负责人:HANE Kazuhiro
-
依托单位:
Fabrication of micro rotary encoder for robot finger and precision machines
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批准号:11355018
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$18.67万
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财政年份:1999
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负责人:HANE Kazuhiro
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依托单位:
STUDY OF ULTRA-FINE STRUCTURED OPTICAL COMPONENTS USIING MICROMACHINING
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批准号:10305020
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$25.22万
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财政年份:1998
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负责人:HANE Kazuhiro
-
依托单位:
Study on high density disk data storage using atomic force micorscopy
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批准号:07555081
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.26万
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财政年份:1995
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负责人:HANE Kazuhiro
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依托单位:
Non-planar lithography using holographic projection
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批准号:07455059
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$3.71万
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财政年份:1995
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负责人:HANE Kazuhiro
-
依托单位:
Studies on the evaluation techniques for micro-mechanical structures by using scanning probe microscopy
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批准号:03650083
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.28万
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财政年份:1991
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负责人:HANE Kazuhiro
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依托单位:
海外基金