Study of optical micro systems by monolithic integration of silicon with nitride semiconductor

硅与氮化物半导体单片集成光学微系统研究

• 批准号: 19106007
• 负责人: HANE Kazuhiro
• 金额: $ 69.64万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19106007/
• 关键词: 光デバイス; 集積化; MEMS; 窒化物半導体; マイクロマシニング; 光集積デバイス; シリコンデバイス

Integrating GaN light source devices with Si three-dimensional structures and micro actuators monolithically, functional micro-electro-mechanical systems (MEMS)for optical applications were developed. Crystal growth of GaN-LED on Si substrate, GaN crystal growth on micro-machined GaN/Si substrate, integration of GaN-LED with Si actuator, and fabrication of GaN actuator were carried out. Integrating GaN-LED with Si-MEMS, a variable lightning device, a micro fluorescent analysis chip etc. were demonstrated.

将GaN光源器件与硅三维结构和微执行器单片集成，开发了用于光学应用的功能型微电子机械系统(MEMS)。完成了在硅衬底上生长GaN-LED晶体、在微机械GaN/Si衬底上生长GaN晶体、GaN-LED与硅驱动器的集成以及GaN驱动器的制作。介绍了GaN-LED与Si-MEMS的集成、可变闪电装置、微型荧光分析芯片等。

项目成果

Comb-drive III-nitride micro mirror fabricated by fast atom beam etching

• DOI: 10.1109/transducers.2011.5969494
• 发表时间: 2011-06
• 期刊: 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference
• 作者: Y. Wang;T. Sasaki;T. Wu;F. Hu;K. Hane

Integrated Fluorescent Analysis System with Monolithic GaN Light Emitting Diode on Si Platform

Si 平台上具有单片 GaN 发光二极管的集成荧光分析系统

• 发表时间: 2012
• 作者: H. Nakazato;H. Kawaguchi;A. Iwabuchi;K. Hane
• 通讯作者: K. Hane

A Freestanding GaN/HfO_2 Membrane Grown by Molecular Beam Epitaxy for GaN-Si Hybrid MEMS

用于 GaN-Si 混合 MEMS 的分子束外延生长的独立式 GaN/HfO_2 膜

• 发表时间: 2009
• 期刊: IEEE Journal of Selected Topics in Quantum Electronics 15(5)
• 作者: H. Sameshima;M. Wakui;F. Hu;K. Hane
• 通讯作者: K. Hane

Formation of a nitrified hafnium oxide buffer layer on silicon substra to and GaN quantum well crystal growth for GaN-Si hybrid optical MEMS

在硅衬底上形成氮化铪缓冲层以及用于 GaN-Si 混合光学 MEMS 的 GaN 量子阱晶体生长

• 发表时间: 2008
• 作者: 大村達夫;真砂佳史;他;M.Uesugi;本間貴士;H. Sameshima
• 通讯作者: H. Sameshima

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy.

• DOI: 10.1186/1556-276x-6-117
• 发表时间: 2011-02-04
• 期刊: Nanoscale research letters
• 作者: Wang Y;Hu F;Hane K
• 通讯作者: Hane K