Development on in-situ observation techniques for surface reaction process under hydrogen atmosphere related to alloy semiconductors

合金半导体相关氢气氛下表面反应过程原位观测技术研究进展

• 批准号: 07555335
• 负责人: YOSHINO Junji
• 金额: $ 1.22万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555335/
• 关键词: surface optical nonlinearity; alloy semiconductor; gallium arsenide; low energy electron diffraction; surface reaction; reflectance anisotropy spectroscopy; 表面洗浄化; 水素化; 窒化; ダイマー; 表面清浄化

In order to develop in-situ observation technique applicable to surface reaction process during crystal growth of alloy semiconductors under hydrogen atmosphere, sum frequency generation method (SFG) has been examined for observation of GaAs surfaces by contrast with conventional vacuum based method and reflectance anisotropy spectroscopy (RDS). The results obtained are as follows.Firstly, hydrogen and nitrogen adsorbed GaAs surfaces have been studied by RDS, and it is found that Ga and As dimer bond breaking has been took place during hydrogen exposure. Ga-rich surface is more reactive than As-rich surfaces for nitrogen, and development of new signal at 3.5eV has been observed during nitridation of Ga-rich surface.Secondly, observation system for surface SFG based on second harinonic light and infrared light obtained from Nd : YAG laser has been developed and methanol adsorbed GaAs surface has been studied. Resonance of symmetric vibration of methyl base has been observed in addition to that of bulk. Incident azimuth dependence of SFG intensity has been analyzed based on simple three states model, and direction of axis of methyl base has been determined. These results indicate that SFG method is to be a powerftul method on analyzing surface reaction process of alloy semiconductors.

为了开发适用于合金半导体晶体生长过程中表面反应过程的原位观测技术，通过与传统的真空法和反射各向异性光谱法（RDS）的对比，研究了和频产生法（SFG）对砷化镓表面的观测。所得结果如下：首先，利用RDS对吸附氢和氮的GaAs表面进行了研究，发现在氢暴露过程中会发生Ga和As二聚体键断裂。富ga表面比富as表面对氮的反应性更强，在3.5eV下富ga表面的氮化过程中出现了新的信号。其次，开发了基于Nd: YAG激光器二次谐波光和红外光的表面砷化镓观测系统，并对甲醇吸附GaAs表面进行了研究。除本体共振外，还观察到甲基基对称振动共振。基于简单三态模型分析了SFG强度与入射方位的关系，确定了甲基碱的轴向。结果表明，SFG法是分析合金半导体表面反应过程的一种有效方法。

项目成果

M.Shiraishi,M.Sobe,and J.Yoshino: "Observation of intial nitridation on GaAs(001) surface by reflectance anisotropy spectroscopy" submitted to jpn.J.Appl.Phys.

M.Shiraishi、M.Sobe 和 J.Yoshino：“通过反射各向异性光谱观察 GaAs(001) 表面的初始氮化”，提交给 jpn.J.Appl.Phys。

M.Sobe,T.Kawashima,and J.Yoshino: "Observation of methanol adsorbed GaAs(001) surface by sum frequency generation" submitted to jpn.J.Appl.Phys.

M.Sobe、T.Kawashima 和 J.Yoshino：“通过和频生成观察甲醇吸附的 GaAs(001) 表面”，提交给 jpn.J.Appl.Phys。

M.Sobe, T.Kawashima, and J.Yoshino: "Observation of methanol adsorbed GaAs (001) surface by sum frequency generation" Jpn.J.Appl.Phys.(submitted).

M.Sobe、T.Kawashima 和 J.Yoshino：“通过和频生成观察甲醇吸附的 GaAs (001) 表面”Jpn.J.Appl.Phys.（已提交）。

M.Shiraishi, M.Sobe, and J.Yoshino: "Observation of initial nitridation on GaAs (001) surface by reflectance anisotropy spectroscopy" Jpn.J.Appl.Phys.(submitted).

M.Shiraishi、M.Sobe 和 J.Yoshino：“通过反射各向异性光谱观察 GaAs (001) 表面的初始氮化”Jpn.J.Appl.Phys.（已提交）。