ATOMIC-LAYER CONTROLLED SUPER-HETEROEPITAXY AND PROPERTIES OF LANTHANOIDE/SEMICONDUCTOR STRUCTURES

原子层控制超异质外延及镧系元素/半导体结构的性能

• 批准号: 08650009
• 负责人: FUJIWARA Yasufumi
• 金额: $ 1.47万
• 依托单位: NAGOYA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650009/
• 关键词: Lanthanoide; Super-heteroepitaxy; ErP; InP; X-ray CTR scattering; AFM; STM; 量子効果; AFM; STM; STS; 量子機能; Er; 蛍光EXAFS法; δド-ピング

There has been increasing interest in the combination of rare-earth (RE) elements and III-V semiconductors. One of the reasons is RE reacts with group-V elements to form lanthanoides such as ErP and ErAs. Incorporation of the lanthanoide layrs in semiconductor heterostructures is expected to facilitate new physics in quantum-confined systems and novel electronic devices, since the lanthanoides exhibit semimetallic behavior.In this research project, we investigated atomic-layr controlled super-heteroepitaxy of ErP on InP substrates. Gas-flow sequence used for the epitaxy was basically the same as that for "delta-doping" of Er. Results obtained experimentally are summarized as follows ;1) Rutherford backscattering (RBS) measurements showed that Er sheet density in samples increases linearly with Er-exposure duration and exhibits no saturation even at 80 min, and that Er atoms, corresponding to 1 mono-layr (ML) in number, are incorporated during the Er-exposure duration of 23 min.2) In 4.2K photoluminescence (PL) measurements, characteristic Er-related emissions due to 4f-intra shell transitions were observed, which were quite different from those in InP doped uniformly with Er.3) X-ray crystal truncation rod (CTR) scattering measurements using synchrotron radiation revealed clearly that Er atoms are incorporated having the NaCl crystal arrangement with P atoms, which was also supported by fluorescence-detected extended X-ray absorption fine structure (EXAFS) measurements. The resultant Er profiles were almost symmetric and were characterized by Er atoms confined in several MLs in thickness.4) Epitaxy of ErP on InP were observed by atomic force microscope (AFM) and ultra-high vacuum scanning tunnelling microscope (UHV-STM). Surface morphology depended strongly on substrate temperature and Er-exposure duration. There were generation of misfit dislocations along the [110] direction and formation of voids and holes.

人们对稀土(RE)元素和III-V半导体的结合越来越感兴趣。其中一个原因是稀土与V族元素反应生成了稀土氧化物，如Ep和Era。由于镧系化合物具有半金属特性，将其引入半导体异质结中有望促进量子受限系统和新型电子器件中的新物理。用于外延的气体流动顺序与用于Er的增量掺杂的气体流动顺序基本相同。实验结果总结如下：1)卢瑟福背散射(RBS)测量表明，样品中的Er片密度随着Er曝光时间的延长而线性增加，即使在80分钟也没有表现出饱和，并且在23分钟的Er曝光时间内，Er原子的数量对应于1个单层(ML)。2)在4.2K光致发光(PL)测量中，观察到4f壳层跃迁引起的特征Er相关发射，这与均匀掺杂Er.3)X射线晶体截断棒(CTR)散射测量清楚地表明Er原子与P原子具有氯化钠晶体排列，这也得到了荧光检测扩展X射线吸收精细结构(EXAFS)测量的支持。4)用原子力显微镜(AFM)和超高真空扫描隧道显微镜(UHV-STM)观察到了InP上ERP的外延。表面形貌强烈依赖于衬底温度和Er暴露时间。沿[110]方向产生失配位错，形成空洞和空洞。

项目成果

M.Tabuchi, Y.Fujiwara, Y.Takeda et al.: "Local structure study on dilute Er in InP revealed by fluorescence EXAFS" J.Syn.Rad.(in press). (1998)

M.Tabuchi、Y.Fujiwara、Y.Takeda 等人：“荧光 EXAFS 揭示的 InP 中稀释 Er 的局域结构研究”J.Syn.Rad.（出版中）。

Y.Fujiwara, Y.Takeda et al.: "Observation of trap states in Er-doped InP by photoreflectance" Appl.Phys.Lett.Vol.70, No.1. 84-86 (1997)

Y.Fujiwara、Y.Takeda 等人：“通过光反射观察掺铒 InP 中的陷阱态”Appl.Phys.Lett.Vol.70，No.1。

L.Bolotov: "Formation of ErP islands on the Er-doped InP(100)by MOVPE" Japanese Journal of Applied Physics. 36(11B). L1534-L1537 (1997)

L.Bolotov：“通过 MOVPE 在 Er 掺杂 InP(100) 上形成 ErP 岛”，日本应用物理学杂志。

Y.FUJIWARA: "Erbium δ-doping to InP by OMVPE" Institute of Physics Conference Series. 145. 149-154 (1996)

Y.FUJIWARA：“OMVPE 对 InP 进行铒 δ 掺杂”物理研究所会议系列 145. 149-154 (1996)。

M.Tabuchi, Y.Fujiwara, Y.Takeda et al.: "Atom configuration study of delta-doped Er in InP" Appl.Surf.Sci.Vol.117/118. 781-784 (1997)

M.Tabuchi、Y.Fujiwara、Y.Takeda 等人：“InP 中 δ 掺杂 Er 的原子构型研究”Appl.Surf.Sci.Vol.117/118。