Atomically-controlled growth and properties of low-dimensional lanthanoide/semiconductor quantum structures

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There has been increasing interest in the combination of rare-earth (RE) elements and III-V semiconductors. One of the reasons is RE reacts with group-V elements to form lanthanoides such as ErP and ErAs. Incorporation of the lanthanoide layers in semiconductor heterostructures is expected to facilitate new physics in quantum-confined systems and novel electronic devices, since the lanthanoides exhibit semimetallic behavior.In this research project, we investigated atomicaily-controlled superKeterbepitaxy of ErP on InP substrates. Results obtained experimentally are summarized as follows :1 ) It has been found that there are appropriate Er sources for ErP growth. In the use of Er(DPM)_3, trisdipivaloymethanatoerbium, the deposit included no Er atoms, although the surface morphology changed drastically after the exposure to the Er source.2 ) ErP was grown on InP surfaces with various crystallographical orientations, (001), (011), (111)A and (111)B, which were controlled by selective-area growth technique. Large ErP islands with relatively flat top were successfully obtained on the (111)B surface.3 ) InP/ErP/InP doubleheterostructures were grown on (111)B InP substrates. Contrary to the structures on (001) substrates, InP cap layers were successfully grown in layer-by-layer mode on the ErP layer.4 ) At the initial stage for DyP/GaAs structures with good lattice-matching, Dy doping to III-V semiconductors were carried out. Well-controlled Dy doping was realized in GaAs and InP, using Dy(MeCp)_3, trismethylcyclopentadienyldysprosium. Characteristic Dy luminescence was observed, for the first time, in four wavelength regions in Dy-doped GaAs.