Development of terahertz emitters and detectors using rare-earth-doped semiconductors

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We have investigated the properties of terahertz emitters and detectors using Er,O-codoped GaAs (GaAs:Er,O) which exhibits ultrafast carrier relaxation at room temperature. Under the irradiation of the light from a femto-second laser, we succeeded in the observation of terahertz emission. The amplitude of the emission increased with the excitation power, followed by the successive saturation. The amplitude was enhanced in an emitter with a multi-layer structure,. Terahertz emission was also detected successfully using GaAs:Er,O.