Preparation and application of polycrystalline silicon carbide thin films as a material for micromachining.
Preparation and application of polycrystalline silicon carbide thin films as a material for micromachining.
批准号:
08650375
负责人:
KAMIMURA Kiichi
金额:
$1.22万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997
中文摘要
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英文摘要
Polycrystalline silicon carbide microstructures were fabricated by micromachining for microsensors in order to estimate the promising properties as a material for micromachining. Microdiaphragms and microbidges were fabricated by micromachining of the polycrystalline silicon carbide film on the single crystal silicon substrate.The polycrystalline silicon carbide film were deposited on (100) surface of single crystal silicon wafer by low pressure chemical vapor deposition at about 1000 degree C.The source material was tetramechisilane (TMS). The silicon carbide microdiaphragms and microbridges were fabricated by reactive ion etching of silicon carbide films and anisotropic etching of silicon substrate.Microsensors were prepared using these structure. The deformation of the diaphragm by the applied pressure was detected optically with optical fibers connected to the diaphragm. The microbridge was useful as a infrared micro-light source.
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K.Kamimura, et al.: "Preparation of Polycrystalline SiC Thin Films and Its Application to Resistive Sensors" Institute of Physics Conference Series. Vol.142. 825-828 (1996)
K.Kamimura等人:“多晶SiC薄膜的制备及其在电阻传感器中的应用”物理研究所会议系列。
DOI:
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发表时间:
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影响因子:
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作者:
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通讯作者:
K.Kamimura, et al: "Preparation of Polycrystalline SiC Thin Films and Its Application to Resistive Sensors" Institute of Physics Conference Series. 142. 825-828 (1996)
K.Kamimura 等人:“多晶 SiC 薄膜的制备及其在电阻传感器中的应用”物理研究所会议系列。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
花岡 健一, 上村 喜一、 他: "光ファイバを用いた位置・速度センサの試作" 先端加工学会誌. 16. 25-30 (1997)
Kenichi Hanaoka、Kiichi Uemura 等人:“使用光纤的位置/速度传感器原型”《先进处理学会杂志》16. 25-30 (1997)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
花岡 健一, 上村 喜一、他: "光ファイバを用いた位置・速度センサの試作" 先端加工学会誌. 16. 25-30 (1997)
Kenichi Hanaoka、Kiichi Uemura 等人:“使用光纤的位置/速度传感器原型”《先进处理学会杂志》16. 25-30 (1997)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
K.Kamimura,他: "Preparation of Polycrystalline SiC Thin Films and Its Application to Resistive Sensors" Institute of Physics Conference Series. 142. 825-828 (1996)
K. Kamimura 等人:“多晶 SiC 薄膜的制备及其在电阻传感器中的应用”物理研究所会议系列 142. 825-828 (1996)。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
共 9 条
Preparation of SiC MIS structure with direct nitridation layer and its appreciation to power MOSFE
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批准号:24560371
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.33万
-
财政年份:2012
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负责人:KAMIMURA Kiichi
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依托单位:
Fabrication of SiC FETs on Sapphire Substrate for High Power and High Temperature Operation.
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批准号:11650321
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
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财政年份:1999
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负责人:KAMIMURA Kiichi
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依托单位:
海外基金