Preparation and application of polycrystalline silicon carbide thin films as a material for micromachining.

微加工材料多晶碳化硅薄膜的制备及应用

• 批准号: 08650375
• 负责人: KAMIMURA Kiichi
• 金额: $ 1.22万
• 依托单位: Shinshu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1996
• 资助国家: 日本
• 起止时间: 1996 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650375/
• 关键词: silicon carbide; micromachining; sensor; pressure sensor; infrared light source; 耐環境性材料; マイクロマシニング; 温度センサ; 圧力センサ

Polycrystalline silicon carbide microstructures were fabricated by micromachining for microsensors in order to estimate the promising properties as a material for micromachining. Microdiaphragms and microbidges were fabricated by micromachining of the polycrystalline silicon carbide film on the single crystal silicon substrate.The polycrystalline silicon carbide film were deposited on (100) surface of single crystal silicon wafer by low pressure chemical vapor deposition at about 1000 degree C.The source material was tetramechisilane (TMS). The silicon carbide microdiaphragms and microbridges were fabricated by reactive ion etching of silicon carbide films and anisotropic etching of silicon substrate.Microsensors were prepared using these structure. The deformation of the diaphragm by the applied pressure was detected optically with optical fibers connected to the diaphragm. The microbridge was useful as a infrared micro-light source.

利用微机械加工技术制备了用于微传感器的多晶碳化硅微结构，以评估其作为微机械加工材料的潜在性能。采用低压化学气相沉积法，以四甲基硅烷（TMS）为源材料，在单晶硅（100）面上沉积了多晶碳化硅薄膜，通过微机械加工在单晶硅衬底上制备了微膜片和微桥。采用反应离子刻蚀碳化硅薄膜和各向异性刻蚀硅衬底的方法制备了碳化硅微膜片和微桥，并以此结构制作了微传感器。通过连接到隔膜的光纤光学地检测由所施加的压力引起的隔膜的变形。该微桥可用作红外微光源。

项目成果

K.Kamimura, et al.: "Preparation of Polycrystalline SiC Thin Films and Its Application to Resistive Sensors" Institute of Physics Conference Series. Vol.142. 825-828 (1996)

K.Kamimura等人：“多晶SiC薄膜的制备及其在电阻传感器中的应用”物理研究所会议系列。

K.Kamimura, et al: "Preparation of Polycrystalline SiC Thin Films and Its Application to Resistive Sensors" Institute of Physics Conference Series. 142. 825-828 (1996)

K.Kamimura 等人：“多晶 SiC 薄膜的制备及其在电阻传感器中的应用”物理研究所会议系列。

花岡 健一, 上村 喜一、 他: "光ファイバを用いた位置・速度センサの試作" 先端加工学会誌. 16. 25-30 (1997)

Kenichi Hanaoka、Kiichi Uemura 等人：“使用光纤的位置/速度传感器原型”《先进处理学会杂志》16. 25-30 (1997)。

花岡 健一, 上村 喜一、他: "光ファイバを用いた位置・速度センサの試作" 先端加工学会誌. 16. 25-30 (1997)

Kenichi Hanaoka、Kiichi Uemura 等人：“使用光纤的位置/速度传感器原型”《先进处理学会杂志》16. 25-30 (1997)。

K.Kamimura,他: "Preparation of Polycrystalline SiC Thin Films and Its Application to Resistive Sensors" Institute of Physics Conference Series. 142. 825-828 (1996)

K. Kamimura 等人：“多晶 SiC 薄膜的制备及其在电阻传感器中的应用”物理研究所会议系列 142. 825-828 (1996)。