A STUDY ON TUNNELING-SPECTROSCOPIC DEVICES WITH NANO-GAP STRUCTURE USING ULTRATHIN SILICON DIOXIDE FILM AS A SPACER

超薄二氧化硅薄膜作为间隔物的纳米间隙结构隧道分光器件的研究

• 批准号: 14350166
• 负责人: MORITA Mizuho
• 金额: $ 9.34万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14350166/
• 关键词: NANO-GAP; SENSING; SILICON DIOXIDE; SILICON; ULTRAPURE WATER; CAPACITANCE; CONDUCTANCE; 電子応答; ナノギャップ構造; トンネル分光; 極薄シリコン酸化膜

Sensing devices with a silicon/nano-gap/silicon structure using a silicon dioxide film as a spacer have been fabricated, and ultrapure water introduced into the nano-gap of the sensing device has been found to be detected by the change of capacitance and conductance for the sensing device. The frequency dependence of capacitance and conductance changes by introducing ultrapure water into the nano-gap has been demonstrated. Scanning electron microscope observation of the cross section of the device structure has shown that a nano-gap structure with a silicon dioxide film as a spacer was fabricated. Fourier transform infrared absorption measurements for the device structure have shown that ultrapure water penetrates into the nano-gap. Near-infrared ray transmission measurements for the device structure have shown that ultrapure water penetrates through the nano-gap and that the nano-gap structure was fabricated as designed, because silicon is transparent to near-infrared ray. It has confirmed that ultrapure water penetrates into the nano-gap because sensing surface is hydrophobic. The effect of silicon dioxide of sensing surface on sensing ultrapure water in the nano-gap has been examined and the condition of high sensitively has been found. We have proposed a sensing model of electron response through states of water.

已经制造了具有使用二氧化硅膜作为间隔物的硅/纳米间隙/硅结构的传感器件，并且已经发现引入到传感器件的纳米间隙中的超纯水通过传感器件的电容和电导的变化来检测。通过将超纯水引入纳米间隙，电容和电导的变化的频率依赖性已经被证明。扫描电子显微镜观察的器件结构的横截面已经表明，与二氧化硅膜作为间隔物的纳米间隙结构的制造。对器件结构的傅里叶变换红外吸收测量表明，超纯水渗入纳米间隙。器件结构的近红外线透射测量表明，超纯水渗透通过纳米间隙，并且纳米间隙结构按照设计制造，因为硅对近红外线是透明的。实验结果表明，由于传感表面的疏水性，超纯水可以渗透到纳米间隙中。考察了敏感表面二氧化硅对纳米间隙中超纯水的敏感性的影响，找到了高灵敏度的条件，提出了电子响应水态的传感模型。

项目成果

Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Yasushi AZUMA, Isao KOJIMA: "The Influence of Organic Contamination on Ultrathin Silicon Dioxide Film Thickness Measured By Ellipsometry"Extended Abstracts of the 8th Workshop on FORMATION CHARACTERIZATION AN

Akihito SHINOZAKI、Kenta ARIMA、Mizuho MORITA、Yasushi AZUMA、Isao KOJIMA：“有机污染对椭圆光测量超薄二氧化硅膜厚度的影响”第八届地层表征研讨会扩展摘要

Development of Nano-Gap Device for Biosensor

生物传感器纳米间隙器件的开发

• 发表时间: 2005
• 期刊: Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials
• 作者: Satoru Morita;Takaaki Hirokane;Tatsuya Takegawa;Shinichi Urabe;Kenta Arima;Junichi Uchikoshi;Mizuho Morita
• 通讯作者: Mizuho Morita

Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure

• DOI: 10.1143/jjap.43.7857
• 发表时间: 2004-11
• 期刊: Japanese Journal of Applied Physics
• 影响因子: 1.5
• 作者: S. Morita;A. Shinozaki;Yuuki Morita;K. Nishimura;T. Okazaki;S. Urabe;M. Morita

CHARACTERIZATIUN OF TUNNELING CURRENT THROUGH ULTRATHIN SILICON DIOXIDE FILMS BY DIFFERENT-METAL GATES MRTHOD

不同金属栅极方法表征通过超薄二氧化硅薄膜的隧道电流

• 发表时间: 2005
• 期刊: The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface - 5, ECS Transactions, The Electrochemical Society 1・1
• 作者: Naoto Yoshii;Tatsuya Okazaki;Takaaki Hirokane;Shinichi Urabe;Kazuo Nishimura;Satoru Morita;Mizuho Morita
• 通讯作者: Mizuho Morita

Yasushi Azuma, Ruiqin Tan, Toshiyuki Fujimoto, Isao Kojima, Akihito Shinozaki, Mizuho Morita: "Uncertainties Caused by Surface Adsorbates in Estimates of the Thickness of SiO_2 Ultrathin Films"Characterization and Metrology for ULSI Technology : 2003 Inte

Yasushi Azuma、Ruiqin Tan、Toshiyuki Fujimoto、Isao Kojima、Akihito Shinozaki、Mizuho Morita：“SiO_2 超薄膜厚度估计中表面吸附物引起的不确定性”ULSI 技术的表征和计量：2003 Inte