A STUDY ON ENERGY LEVEL CHARACTERIZATION DEVICES FOR BIOLOGICAL MATERIALS BY ELECTRON RESPONSE OF METAL/MICRO-GAP/SEMICONDUCTOR STRUCTURES

金属/微间隙/半导体结构电子响应生物材料能级表征装置的研究

• 批准号: 18360148
• 负责人: MORITA Mizuho
• 金额: $ 11.2万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18360148/
• 关键词: シリコン; シリコン酸化膜; 微小空隙; 電子応答; センシングデバイス

The sensing of deoxyribonucleic acid solutions by capacitance-voltage measurements of a metal/micro-gap/semiconductor structure device has been demonstrated. The different concentrations of deoxyribonucleic acid solutions have been characterized from the change of the capacitance-voltage curve for the sensing device. A metal/insulator/gap/insulator/semiconductor structure device was sensitive to the ion concentration of the solution and had high sensitivity. It has been suggested that the change of capacitance-voltage characteristics reflects the change of the charge on the sensing silicon dioxide surface.

通过金属/微间隙/半导体结构器件的电容-电压测量来感测脱氧核糖核酸溶液已经被证明。从传感装置的电容-电压曲线的变化来表征不同浓度的脱氧核糖核酸溶液。金属/绝缘体/间隙/绝缘体/半导体结构器件对溶液的离子浓度敏感，并且具有高灵敏度。有人认为，电容-电压特性的变化反映了敏感二氧化硅表面电荷的变化。

项目成果

Metal-Gap-Semiconductor Sensing Devices for DNA Solutions

用于 DNA 解决方案的金属间隙半导体传感器件

• 发表时间: 2006
• 期刊: Abstracts, 210th Meeting of The Electrochemical Society
• 作者: Takaaki Hirokane;Hideaki Hashimoto;Daisuke Kanzaki;Shinichi Urabe;Mizuho Morita
• 通讯作者: Mizuho Morita

Sensing of DNA solution with Metal-Gap-Insulator-Semiconductor Device

使用金属间隙绝缘体半导体器件感测 DNA 溶液

• 发表时间: 2009
• 作者: Takaaki Hirokane;Daisuke Kanzaki;Hideaki Hashimoto;Shinichi Urabe Kenta Arima;Junichi Uchikoshi;Mizuho Morita
• 通讯作者: Mizuho Morita

Sensing ofλDNA solutions by metal-gap-semiconductor devices

通过金属间隙半导体器件感测λDNA溶液

• 发表时间: 2008
• 期刊: Surface and Interface Analysis 40(Peer-reviewed.)
• 作者: Takaaki Hirokane;Daisuke Kanzaki;Hideaki Hashimoto;Shinichi Urabe;Kenta Arima;Junichi Uchikoshi;Mizuho Morita
• 通讯作者: Mizuho Morita

Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method

不同金属栅极法表征穿过超薄二氧化硅薄膜的隧道电流

• 发表时间: 2008
• 期刊: Japanese Journal of Applied Physics 47
• 作者: Takaaki HIROKANE;Naoto YOSHII;Tatsuya OKAZAKI;Shinichi URABE;Kazuo NISHIMURA;Satoru MORITA;Kenta ARIMA;Junichi UCHIKOSHI;Mizuho MORITA
• 通讯作者: Mizuho MORITA

Current-Voltage Characteristics of Gap Electrodes with ExtendedλDNA Molecules

具有扩展λDNA分子的间隙电极的电流-电压特性

• 发表时间: 2006
• 作者: Katsuhiro Hashimoto;Takamichi Hanada;Yasuhumi Ochi;Takaaki Hirokane;Shigeki Kawakami;Susumu Uchiyama;Kiichi Fukui;Kenta Arima;Junichi Uchikoshi;Mizuho Morita
• 通讯作者: Mizuho Morita