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A STUDY ON REACTION CONTROL BETWEEN SILICON SURFACES AND OXYGEN-FREE WATER/WATER-FREE OXYGEN IN COMPLETELY CLOSED SYSTEMS

全封闭系统中硅表面与无氧水/无水氧反应控制的研究

基本信息

批准号：
10555009
负责人：
MORITA Mizuho
金额：
$ 8.19万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B).
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 2000
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10555009/
关键词：
SEMICONDUCTOR SURFACE SEMICONDUCTOR PROCESS SILICON SURFACE REACTION

项目摘要

A combination method of heating-up process with cooling-down in thermal desorption spectroscopy has been proposed in order to reveal the chemical reaction of hydrogen-terminated Si surfaces with water at elevated temperatures. It has been found for the first time that an HF-cleaned Si (100) surface reacts with water at approximate 400℃ or higher. HF-cleaned Si (100) surfaces have been analyzed with a thermal desorption spectroscopy system under introducing oxygen gas into the analytical chamber so as to characterize chemical reactions of Si surfaces with oxygen. It has been demonstrated that the HF-cleaned Si (100) surface reacts with oxygen or water after the hydrogen desorption at approximate 510℃ under introducing oxygen gas. The thermal oxidation of HF-cleaned Si (100) surfaces in the heating-up has been characterized with an oxidation system. It has been demonstrated that the oxide film thickness grown during the heating-up in oxygen gas at an atmospheric pressure to 900℃ begins to increase beyond approximate 550℃. Metal-oxide-semiconductor (MOS) diode characteristics have shown that leak current densities through silicon dioxide films with thinner preoxide grown during the heating-up to thermal oxidation at 900℃ are lower than that with thicker preoxide for the film with the total thickness of approximate 3 nm. The preoxide with the thickness of 0.3-0.4 nm, which corresponds to one molecular layer of oxide, has been grown during the heating-up to 900℃ at the rate of 50 deg/sec in 0.3% oxygen gas diluted with nitrogen. It has been demonstrated for the first time that the electrical insulating performance and reliability of ultrathin silicon dioxide films depends on the ultrapure water cleaning time of silicon wafers before MOS diode fabrication because of atomic structure change of silicon surface by ultrapure water cleaning.

本文提出了热脱附谱中升温与降温相结合的方法，以揭示高温下氢端硅表面与水的化学反应。首次发现经HF清洗的Si（100）表面在约400℃或更高的温度下与水发生反应。在分析室通入氧气的条件下，利用热脱附光谱系统对经HF清洗的Si（100）表面进行了分析，以表征Si表面与氧气的化学反应。研究表明，经HF清洗的Si（100）表面在通入氧气的条件下，在约510℃下脱氢后，与氧或水发生反应。用氧化系统研究了HF清洗Si（100）表面在加热过程中的热氧化。结果表明，在常压氧气中加热到900℃时，氧化膜厚度在550℃左右开始增加。金属氧化物半导体（MOS）二极管的特性表明，在900℃热氧化过程中生长的预氧化物较薄的二氧化硅薄膜的漏电流密度低于总厚度约为3 nm的预氧化物较厚的二氧化硅薄膜的漏电流密度。在0.3%的氧气和氮气中，以50度/秒的速率加热到900℃，生长出厚度为0.3- 0.4nm的预氧化物，相当于一个氧化物分子层。首次证明了超纯水清洗改变了硅表面的原子结构，从而使硅衬底上的二氧化硅薄膜的电绝缘性能和可靠性取决于MOS二极管制造前硅片的超纯水清洗时间。